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NE3210S01-T1B

NE3210S01-T1B: A high-performance Trans JFET with a 4V voltage rating and a current capacity of 70mA

Inventory:9,467

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Overview of NE3210S01-T1B

The NE3210S01-T1B is a low noise amplifier (LNA) IC designed for high-frequency applications in wireless communication systems. This IC offers excellent amplification performance with minimal added noise, making it ideal for sensitive reception scenarios.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GND: Ground connection
  • VCC: Positive power supply
  • RF IN: Radio frequency input
  • RF OUT: Amplified radio frequency output
  • Bias: Bias voltage input
  • Bias: Bias voltage output
  • VCC: Positive power supply
  • GND: Ground connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NE3210S01-T1B IC for a visual representation.

Key Features

  • Low Noise Amplification: The NE3210S01-T1B provides high amplification with minimal added noise, ensuring clean signal reception.
  • Wide Frequency Range: This IC operates effectively across a broad frequency spectrum, making it versatile for various wireless communication applications.
  • High Gain: With a high gain factor, the NE3210S01-T1B boosts weak signals to improve reception quality.
  • Low Power Consumption: Designed for efficiency, this LNA IC consumes minimal power, suitable for portable and battery-operated devices.
  • Compact Package: Available in a compact form factor, the NE3210S01-T1B is space-saving and suitable for miniaturized designs.

Note: For detailed technical specifications, please refer to the NE3210S01-T1B datasheet.

Application

  • Wireless Receivers: Ideal for enhancing sensitivity and signal quality in wireless receiver systems.
  • Satellite Communication: Suitable for satellite communication applications requiring low noise amplification.
  • Radar Systems: Used in radar systems to improve the reception of weak signals for accurate detection.

Functionality

The NE3210S01-T1B is a specialized LNA IC that amplifies radio frequency signals while maintaining low noise levels. It is designed to enhance reception performance in high-frequency communication systems.

Usage Guide

  • Power Supply: Connect VCC (Pin 2 and Pin 7) to the positive power supply voltage.
  • Signal Input: Apply the radio frequency signal to the RF IN (Pin 3) input for amplification.
  • Signal Output: Obtain the amplified signal from the RF OUT (Pin 4) output.

Frequently Asked Questions

Q: What is the typical noise figure of the NE3210S01-T1B?
A: The NE3210S01-T1B boasts a low noise figure, typically below 1 dB, ensuring minimal additional noise in amplification.

Q: Is the NE3210S01-T1B suitable for microwave applications?
A: Yes, the NE3210S01-T1B is designed for use in high-frequency applications, including microwave systems, where low noise amplification is critical.

Equivalent

For similar functionalities, consider these alternatives to the NE3210S01-T1B:

  • LTC6910: A low noise amplifier IC from Linear Technology offering similar high-performance amplification with low noise characteristics.
  • MGA-81563: This LNA IC from Avago Technologies provides high gain and low noise figure, suitable for demanding high-frequency applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type HFET Technology GaAs
Operating Frequency 12 GHz Gain 13.5 dB
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 4 V
Vgs - Gate-Source Breakdown Voltage - 3 V Id - Continuous Drain Current 70 mA
Maximum Operating Temperature + 125 C Pd - Power Dissipation 165 mW
Mounting Style SMD/SMT Package / Case SO-1
Brand CEL Forward Transconductance - Min 55 mS
NF - Noise Figure 0.35 dB Product RF JFET
Product Type RF JFET Transistors Factory Pack Quantity 4000
Subcategory Transistors Type GaAs HFET

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    Returns for refund: within 90 days

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packageimg

NE3210S01-T1B

NE3210S01-T1B: A high-performance Trans JFET with a 4V voltage rating and a current capacity of 70mA

Inventory:

9,467