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NDF06N60ZH

Power Field-Effect Transistor

Inventory:6,333

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Overview of NDF06N60ZH

NDF06N60ZH is a Power MOSFET optimized for low ON resistance, low gate charge, and high avalanche tested performance. It provides excellent performance for adapter (notebook, printer, gaming), LCD panel power, and lighting ballasts applications.

Pinout

The NDF06N60ZH pinout refers to the configuration and function of each pin in its TO-220-3 FullPak package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the NDF06N60ZH has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Low ON Resistance: This feature enables efficient power switching and reduces energy losses.
  • Low Gate Charge: This feature minimizes gate-to-source capacitance, reducing the time required to charge or discharge the gate.
  • 100% Avalanche Tested: This feature ensures that the device can withstand high-energy pulses without damage.
  • Pb-Free, Halogen Free/BFR Free and RoHS Compliant: This feature makes the device environmentally friendly and compliant with international regulations.
  • ESD diode-protected gate: This feature provides protection against electrostatic discharge (ESD) events that can damage the device.

Applications

  • Adapter (Notebook, Printer, Gaming): The NDF06N60ZH is suitable for use in adapters that require high power switching and low energy losses.
  • LCD Panel Power: This device can be used to power LCD panels that require efficient power switching and low voltage operation.
  • Lighting Ballasts: The NDF06N60ZH is suitable for use in lighting ballasts that require high power switching and low energy losses.

Advantages and Disadvantages

Advantages

  • High Power Switching Capability: The NDF06N60ZH can handle high power switching applications with ease, making it suitable for use in demanding applications.
  • Low Energy Losses: This device minimizes energy losses during power switching operations, reducing heat generation and increasing overall system efficiency.

Disadvantages

  • Sensitivity to Overvoltage Conditions: The NDF06N60ZH is sensitive to overvoltage conditions that can cause damage or malfunction. Proper voltage regulation and protection circuits are necessary to ensure safe operation.

Equivalents

For similar functionalities, consider these alternatives to the NDF06N60ZH:

  • NXP BUK206-50A: This device offers similar performance and features to the NDF06N60ZH.
  • Fairchild FET1010P: This device provides high power switching capability and low energy losses, making it a suitable alternative to the NDF06N60ZH.
  • STMicroelectronics STW45NF50: This device offers high power switching capability and low energy losses, making it a suitable alternative to the NDF06N60ZH.

Frequently Asked Questions

Q: What is the maximum voltage rating of the NDF06N60ZH?
A: The maximum voltage rating of the NDF06N60ZH is 600V.

Q: What is the maximum current rating of the NDF06N60ZH?
A: The maximum current rating of the NDF06N60ZH is 7.1A.

Q: Is the NDF06N60ZH suitable for use in high-reliability applications?
A: Yes, the NDF06N60ZH is suitable for use in high-reliability applications due to its high avalanche tested performance and low energy losses.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 7.1 A
Rds On - Drain-Source Resistance 980 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3.9 V Qg - Gate Charge 31 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 35 W Brand onsemi
Configuration Single Fall Time 28 ns
Forward Transconductance - Min 5 S Product Type MOSFET
Rise Time 17 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 13 ns
Unit Weight 0.068784 oz

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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packageimg

NDF06N60ZH

Power Field-Effect Transistor

Inventory:

6,333