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NAND08GW3B2AN6E

8 Gigabit Memory Module

Inventory:6,982

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Overview of NAND08GW3B2AN6E

The NAND08GW3B2AN6E is a high-speed CMOS NAND gate IC with 8 gates in one package, designed for digital logic applications requiring NAND functionality. It offers a compact solution for implementing multiple NAND gates in a single integrated circuit.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A1, A2, A3, A4, A5, A6, A7, A8: Input pins for respective NAND gates
  • Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8: Output pins for respective NAND gates
  • VCC: Positive Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NAND08GW3B2AN6E IC for a visual representation.

Key Features

  • High-Speed Operation: The NAND08GW3B2AN6E offers fast switching speeds, suitable for high-frequency digital circuits.
  • Multiple Gates: With 8 NAND gates in one package, this IC simplifies PCB layout and reduces component count.
  • Wide Operating Voltage Range: Operates from a standard +5V supply, compatible with common digital systems.
  • Low Power Consumption: The CMOS technology used in this IC ensures low power consumption, ideal for energy-efficient designs.

Note: For detailed technical specifications, please refer to the NAND08GW3B2AN6E datasheet.

Application

  • Digital Logic Design: The NAND08GW3B2AN6E is ideal for use in digital logic circuits, such as in arithmetic units, control systems, and data processing applications.
  • Signal Processing: This IC can be used for signal processing tasks that require NAND gate functionality in digital systems.
  • Automotive Electronics: Suitable for automotive electronics applications that involve logic operations and signal manipulation.

Functionality

The NAND08GW3B2AN6E integrates 8 NAND gates with inputs and outputs, enabling versatile logic operations in digital circuits. It provides a reliable and efficient solution for implementing NAND functionality.

Usage Guide

  • Power Supply: Connect VCC (Pin 9) to the supply voltage and GND (Pin 10) to the ground.
  • Logic Inputs: Apply logic high (1) or low (0) signals to the input pins (A1 - A8) to perform NAND operations.
  • Output: The output pins (Y1 - Y8) provide the result of the corresponding NAND operations.

Frequently Asked Questions

Q: What is the maximum operating frequency of the NAND08GW3B2AN6E?
A: The NAND08GW3B2AN6E is designed for high-speed operation and can typically handle frequencies up to several megahertz.

Q: Is the NAND08GW3B2AN6E suitable for applications requiring low power consumption?
A: Yes, the NAND08GW3B2AN6E's CMOS technology ensures low power consumption, making it suitable for battery-operated devices and energy-efficient designs.

Equivalent

For similar functionalities, consider these alternatives to the NAND08GW3B2AN6E:

  • SN74HC00: A quad 2-input NAND gate IC from Texas Instruments offering similar NAND gate functionality.
  • CD4011: A CMOS NAND gate IC with 4 NAND gates per package, providing NAND logic capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TSOP-48
Series NAND08G-B Memory Size 8 Gbit
Interface Type Parallel Organization 1 G x 8
Timing Type Asynchronous Data Bus Width 8 bit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Supply Current - Max 30 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Active Read Current - Max 30 mA
Architecture Multiplane Brand STMicroelectronics
Memory Type NAND Moisture Sensitive Yes
Product NAND Flash Product Type NAND Flash
Speed 30 ns Standard Not Supported
Factory Pack Quantity 576 Subcategory Memory & Data Storage

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packageimg

NAND08GW3B2AN6E

8 Gigabit Memory Module

Inventory:

6,982