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MW5IC970NBR1

Power Amplification Module for RF Signal at 900MHz Frequency

Inventory:9,353

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Overview of MW5IC970NBR1

The MW5IC970NBR1 is a high-power RF integrated circuit designed for use in wireless communication systems. This IC offers amplification for RF signals with high efficiency and output power, making it suitable for applications in the cellular, radar, and satellite communication fields.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Positive Power Supply
  • VGG1: Bias Voltage 1
  • VGG2: Bias Voltage 2
  • VGG3: Bias Voltage 3
  • VGG4: Bias Voltage 4
  • GND: Ground
  • RF IN: RF Input
  • RF OUT: RF Output
  • VBAT: Battery Voltage
  • EN: Enable Pin
  • MODE: Mode Control Pin
  • AGC: Automatic Gain Control
  • TEMP: Temperature Sensing Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MW5IC970NBR1 IC for a visual representation.

Key Features

  • High-Power RF Amplification: The MW5IC970NBR1 provides high output power amplification for RF signals, enabling long-range wireless communication.
  • Efficient Operation: This IC operates with high efficiency, minimizing power consumption and heat dissipation.
  • Wide Frequency Range: With a broad frequency range, the MW5IC970NBR1 is versatile and suitable for various RF applications.
  • Integrated Bias Voltage Generators: The IC features built-in bias voltage generators for easy biasing and operation.
  • Temperature Sensing: The temperature sensing pin allows for thermal management and protection of the IC.

Note: For detailed technical specifications, please refer to the MW5IC970NBR1 datasheet.

Application

  • Cellular Communication Systems: Ideal for use in cellular base stations and repeaters to boost signal strength.
  • Radar Systems: Suitable for radar applications requiring high-power RF amplification.
  • Satellite Communication: Used in satellite communication systems for reliable long-distance communication.

Functionality

The MW5IC970NBR1 is designed to amplify RF signals with high power and efficiency, providing reliable communication in wireless systems.

Usage Guide

  • Power Supply: Connect VDD (Pin 1) to the positive power supply and GND (Pin 6) to ground.
  • RF Connections: Connect RF IN (Pin 7) to the RF input signal and RF OUT (Pin 8) to the output antenna or transmission line.
  • Biasing: Apply bias voltages VGG1 to VGG4 to the respective pins for proper biasing of the IC.

Frequently Asked Questions

Q: Is the MW5IC970NBR1 suitable for use in 5G communication systems?
A: Yes, the MW5IC970NBR1's high-power amplification capability makes it suitable for 5G applications requiring enhanced signal strength.

Equivalent

For similar functionalities, consider these alternatives to the MW5IC970NBR1:

  • MW7IC913: A high-power RF IC with similar amplification capabilities and wide frequency coverage.
  • MW4IC825: This IC offers high efficiency and output power for RF systems, suitable for various communication applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Amplifier RoHS Details
Mounting Style SMD/SMT Type Power Amplifiers
Technology Si Operating Frequency 132 MHz to 960 MHz
Gain 30 dB Qualification AEC-Q100
Series MW5IC970N Brand NXP Semiconductors
Input Return Loss 10 dB Moisture Sensitive Yes
Number of Channels 2 Channel Product Type RF Amplifier
Factory Pack Quantity 500 Subcategory Wireless & RF Integrated Circuits
Part # Aliases 935313779528 Unit Weight 0.067454 oz

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MW5IC970NBR1

Power Amplification Module for RF Signal at 900MHz Frequency

Inventory:

9,353