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MUN5235DW1T1G

Transistor Digital NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Inventory:9,495

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Overview of MUN5235DW1T1G

The MUN5235DW1T1G is a dual NPN/PNP bipolar junction transistor array IC designed for amplification and switching applications. It combines two transistors (NPN and PNP) in a single package, offering flexibility in circuit design and space-saving benefits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D1:C-E-Diode 1
  • B1:Base 1
  • E1:Emitter 1
  • C1:Collector 1
  • B2:Base 2
  • E2:Emitter 2
  • C2:Collector 2
  • VB:Base Common
  • VE:Emitter Common

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MUN5235DW1T1G IC for a visual representation.

Key Features

  • Dual NPN/PNP Transistor Array: Provides two bipolar junction transistors (NPN and PNP) in a single package for versatile circuit design.
  • Amplification and Switching: Suitable for both amplification and switching applications in electronic circuits.
  • Space-Saving Package: Compact IC design saves board space and simplifies PCB layout.
  • High Voltage Capability: The transistors in the array can handle moderate to high voltage levels as per the specifications.
  • Wide Operating Temperature Range: Operates effectively within a broad temperature range, making it suitable for various environmental conditions.

Note: For detailed technical specifications, please refer to the MUN5235DW1T1G datasheet.

Application

  • Signal Amplification: Ideal for amplifying weak signals in audio, radio frequency, and sensor applications.
  • Switching Circuits: Can be used in various electronic switching circuits for on/off control of components.
  • Mixed-Signal Circuits: Suitable for circuits requiring both NPN and PNP transistors in a compact package.

Functionality

The MUN5235DW1T1G integrates dual NPN and PNP transistors in a single IC, providing amplification and switching capabilities in electronic circuits, offering design flexibility and space efficiency.

Usage Guide

  • Connectivity: Utilize the respective pins for NPN and PNP transistors based on the application's requirements.
  • Biasing: Ensure proper biasing of the transistors as per the circuit design to achieve the desired amplification or switching behavior.
  • Heat Dissipation: Pay attention to heat dissipation considerations based on current and voltage requirements for reliable operation.

Frequently Asked Questions

Q: What are the typical applications of MUN5235DW1T1G?
A: MUN5235DW1T1G is commonly used in audio amplifiers, motor control circuits, and signal processing applications.

Q: Can the MUN5235DW1T1G be used in high-frequency circuits?
A: While the MUN5235DW1T1G can handle moderate frequencies, for high-frequency applications, consider specialized components designed for such requirements.

Equivalent

For similar functionalities, consider these alternatives to the MUN5235DW1T1G:

  • MMBT6429: A dual NPN and PNP transistor array IC offering similar functionality for amplification and switching tasks.
  • BC847S: This transistor array IC from Diodes Incorporated provides dual NPN and PNP transistors in a compact package for versatile circuit designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity Dual NPN
IC Continuous (A) 0.1 V(BR)CEO Min (V) 50
hFE Min 80 R1 (kΩ) 2.2
R2 (kΩ) 47 R1/R2 Typ 0.047
Vi(off) Max (V) 0.5 Vi(on) Min (V) 1.1
Pricing ($/Unit) $0.0235Sample

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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packageimg

MUN5235DW1T1G

Transistor Digital NPN 50V 100mA 385mW 6-Pin SC-88 T/R

Inventory:

9,495