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MUN5214DW1T1G

Digital Transistors NPN Silicon Switching Transistor 50V

Quantity Unit Price(USD) Ext. Price
10 $0.052 $0.52
100 $0.041 $4.10
300 $0.036 $10.80
3000 $0.032 $96.00
6000 $0.029 $174.00
9000 $0.028 $252.00

Inventory:7,544

*The price is for reference only.
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Overview of MUN5214DW1T1G

The MUN5214DW1T1G is a general-purpose NPN transistor designed for switching and amplification applications. This transistor features a high current gain and low saturation voltage, making it suitable for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MUN5214DW1T1G transistor for better understanding.

Key Features

  • NPN Transistor: The MUN5214DW1T1G is an NPN type transistor suitable for switching and amplification tasks.
  • High Current Gain: This transistor offers a high current gain, enabling efficient signal amplification.
  • Low Saturation Voltage: With its low saturation voltage, the MUN5214DW1T1G minimizes power loss in switching applications.
  • General Purpose: This transistor is versatile and can be used in a wide range of electronic circuits.

Note: For detailed technical specifications, please refer to the MUN5214DW1T1G datasheet.

Application

  • Switching Circuits: Ideal for use in electronic circuits for switching operations.
  • Amplification: Suitable for amplification of signals in various electronic devices.
  • General Electronics: Widely used in general electronics applications due to its versatility.

Functionality

The MUN5214DW1T1G NPN transistor is designed to amplify and switch electronic signals efficiently, making it a valuable component in electronic circuits.

Usage Guide

  • Emitter (E): Connects to the ground or common reference point.
  • Base (B): Input terminal for controlling the transistor's switching or amplification action.
  • Collector (C): Output terminal that carries the amplified or switched signal.

Frequently Asked Questions

Q: Is the MUN5214DW1T1G suitable for high-frequency applications?
A: The MUN5214DW1T1G is designed for general-purpose use and may not be ideal for high-frequency applications. Consider specialized transistors for such requirements.

Equivalent

For similar functionalities, consider these alternatives to the MUN5214DW1T1G:

  • 2N2222: A widely used NPN transistor known for its general-purpose applications and reliability.
  • BC548: Another NPN transistor suitable for switching and amplification tasks in electronic circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity Dual NPN
IC Continuous (A) 0.1 V(BR)CEO Min (V) 50
hFE Min 80 R1 (kΩ) 10
R2 (kΩ) 47 R1/R2 Typ 0.213
Vi(off) Max (V) 0.5 Vi(on) Min (V) 1.4
Pricing ($/Unit) $0.0235Sample

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MUN5214DW1T1G

Digital Transistors NPN Silicon Switching Transistor 50V

Inventory:

7,544