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MTW10N100E

Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

Inventory:4,369

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Overview of MTW10N100E

The MTW10N100E is a N-channel enhancement-mode power MOSFET designed for high-speed switching applications. It features a low on-state resistance and high avalanche capability, making it suitable for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTW10N100E MOSFET for a visual representation.

Key Features

  • N-Channel Power MOSFET: Designed for use in power switching applications.
  • Low On-State Resistance: Provides efficient power management with minimal voltage drop.
  • High Avalanche Capability: Can handle high energy pulses without damage.
  • Fast Switching Speed: Enables high-speed switching operations in electronic circuits.
  • Temperature Stability: Performs reliably across a wide temperature range.

Note: For detailed technical specifications, please refer to the MTW10N100E datasheet.

Application

  • Switching Power Supplies: Ideal for use in switching power supplies and converters.
  • Motor Control: Suitable for electronic motor control applications.
  • LED Lighting: Used in LED driver circuits for efficient power management.

Functionality

The MTW10N100E is a N-channel power MOSFET designed for high-speed switching applications, offering low on-state resistance and high avalanche capability for efficient power management.

Usage Guide

  • Power Supply: Connect the Source (S) pin to ground and apply the Gate (G) voltage to control the Drain (D) current.
  • Switching Operations: Use the MTW10N100E in circuits requiring high-speed switching with minimal power loss.

Frequently Asked Questions

Q: What is the maximum drain current rating of the MTW10N100E?
A: The MTW10N100E can handle a maximum drain current of 10A under specified conditions.

Q: Is the MTW10N100E suitable for automotive applications?
A: Yes, the MTW10N100E is designed to withstand automotive voltage and temperature requirements, making it suitable for automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the MTW10N100E:

  • IRF540N: A popular N-channel MOSFET with similar specifications and application uses.
  • STP75NF75: Another N-channel MOSFET offering comparable performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category onsemi Brand onsemi

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MTW10N100E

Power Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE

Inventory:

4,369