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MTM861270LBF

Large Body Field-Effect Transistor for Mobile Technology Manager

Inventory:5,517

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Overview of MTM861270LBF

The MTM861270LBF is a high-power N-channel MOSFET transistor designed for use in power electronics applications. This transistor features a low on-resistance and high current capability, making it suitable for power supply, motor control, and electronic switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body
  • VCC: Positive Power Supply
  • GND: Ground
  • EN: Enable Pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTM861270LBF MOSFET for a visual representation.

Key Features

  • High-Power N-Channel MOSFET: The MTM861270LBF is a high-power MOSFET with low on-resistance for efficient power handling.
  • High Current Capability: This transistor can handle high current levels, making it suitable for power applications.
  • Low On-Resistance: The low on-resistance of the MTM861270LBF reduces power dissipation and improves efficiency.
  • Fast Switching Speed: With fast switching characteristics, this MOSFET allows for rapid switching in electronic circuits.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility in different circuit designs.

Note: For detailed technical specifications, please refer to the MTM861270LBF datasheet.

Application

  • Power Supply Systems: Ideal for use in power supply systems to regulate and control power distribution.
  • Motor Control: Suitable for motor control applications in robotics, automation, and electric vehicles.
  • Electronic Switching: Used in electronic switching circuits for on/off control of various loads.

Functionality

The MTM861270LBF MOSFET is designed to handle high-power applications with low on-resistance and high current capability. It efficiently switches power in electronic circuits, making it essential for various power electronics applications.

Usage Guide

  • Power Connection: Connect the Drain (D) pin to the load, Source (S) pin to ground, and Gate (G) pin to the controlling signal.
  • Enable Pin: Use the EN pin to enable or disable the MOSFET for efficient power management.

Frequently Asked Questions

Q: Can the MTM861270LBF be used for high-frequency applications?
A: The MTM861270LBF is suitable for high-frequency applications due to its fast switching speed and low on-resistance.

Equivalent

For similar functionalities, consider these alternatives to the MTM861270LBF:

  • IRF3205: A high-power N-channel MOSFET with similar characteristics to the MTM861270LBF for power electronics applications.
  • STP55NF06L: This N-channel MOSFET provides high current handling capabilities and low on-resistance for power systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tape & Reel (TR) Product Status Obsolete
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V Rds On (Max) @ Id, Vgs 120mOhm @ 1A, 4V
Vgs(th) (Max) @ Id 1.1V @ 1mA Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 10 V Power Dissipation (Max) 540mW (Ta)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package WSSMini6-F1 Package / Case 6-SMD, Flat Leads

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packageimg

MTM861270LBF

Large Body Field-Effect Transistor for Mobile Technology Manager

Inventory:

5,517