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MTD6P10E

Product MTD6P10E is a Si-based power MOSFET designed for power applications

Inventory:7,529

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Overview of MTD6P10E

The MTD6P10E is a power MOSFET designed for high-efficiency switching applications. It features a low on-resistance and can handle high current levels, making it suitable for various power management and conversion tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate control for the MOSFET
  • SOURCE: Source terminal
  • DRAIN: Drain terminal
  • SOURCE: Source terminal
  • DRAIN: Drain terminal
  • SOURCE: Source terminal
  • DRAIN: Drain terminal
  • SOURCE: Source terminal
  • DRAIN: Drain terminal
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MTD6P10E MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The MTD6P10E offers a low on-resistance for efficient power handling.
  • High Current Capability: Capable of handling high current levels for power switching applications.
  • High Efficiency: Designed for high-efficiency power management and conversion.
  • Fast Switching Speed: Provides fast switching characteristics for responsive power control.
  • Low Gate Charge: Features low gate charge for improved efficiency and reduced switching losses.

Note: For detailed technical specifications, please refer to the MTD6P10E datasheet.

Application

  • Power Supplies: Ideal for power supply and voltage regulator circuits.
  • Motor Control: Suitable for motor drive and control applications.
  • LED Lighting: Used in LED driver circuits for efficient power management.

Functionality

The MTD6P10E is a power MOSFET designed for high-efficiency power switching applications. It enables efficient power management and control in various electronic systems.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the GATE pin for desired switching behavior.
  • Load Connection: Connect the load between the SOURCE and DRAIN terminals to control power flow.
  • Heat Dissipation: Ensure proper heat sinking for high-current applications to prevent overheating.

Frequently Asked Questions

Q: What is the maximum current rating for the MTD6P10E?
A: The MTD6P10E can handle a maximum current of X amps, making it suitable for high-power applications.

Q: Is the MTD6P10E suitable for PWM applications?
A: Yes, the MTD6P10E's fast switching speed and low gate charge make it suitable for PWM (Pulse Width Modulation) control in power electronics.

Equivalent

For similar functionalities, consider these alternatives to the MTD6P10E:

  • FQP30N06L: This power MOSFET offers comparable performance to the MTD6P10E and is widely used in power switching applications.
  • IRF3205: A widely used power MOSFET known for its high current capability and efficiency in power management.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case TO-252-3
Transistor Polarity P-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 6 A
Rds On - Drain-Source Resistance 660 mOhms Vgs - Gate-Source Voltage - 15 V, + 15 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 50 W Channel Mode Enhancement
Brand onsemi Configuration Single
Fall Time 9 ns Forward Transconductance - Min 1.5 S
Height 2.38 mm Length 6.73 mm
Product Type MOSFET Rise Time 29 ns
Subcategory MOSFETs Transistor Type 1 P-Channel
Type MOSFET Typical Turn-Off Delay Time 18 ns
Typical Turn-On Delay Time 12 ns Width 6.22 mm
Unit Weight 0.011640 oz

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MTD6P10E

Product MTD6P10E is a Si-based power MOSFET designed for power applications

Inventory:

7,529