• MT53D512M32D2DS-053 WT:D WFBGA-200
MT53D512M32D2DS-053 WT:D WFBGA-200

MT53D512M32D2DS-053 WT:D

MT53D512M32D2DS-053 WT:D DDR SDRAM WFBGA-200 ROHS

Quantity Unit Price(USD) Ext. Price
1 $8.267 $8.27
10 $6.676 $66.76
30 $6.064 $181.92
100 $5.550 $555.00

Inventory:5,487

*The price is for reference only.
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Submit your quote request for MT53D512M32D2DS-053 WT:D using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of MT53D512M32D2DS-053 WT:D

The MT53D512M32D2DS-053 WT is a 16Gb (2GB) LPDDR4 (Low Power Double Data Rate 4) DRAM module from Micron, designed for high-performance, low-power memory applications. With a wide range of mobile, automotive, and IoT applications, this LPDDR4 memory is optimized for efficient power consumption, high-speed data transfer, and compact integration. The memory module is housed in a WFBGA-200 (Wafer Level Fine Ball Grid Array) package, providing a small form factor ideal for space-constrained designs like smartphones, tablets, and embedded systems.

Pinout

The MT53D512M32D2DS-053 WT pinout refers to the configuration and function of each pin in its WFBGA-200 package, designed to provide multiple power, ground, address, data, and control signals. The 200-ball BGA configuration allows for high-speed data transfer and reliable signal integrity in high-performance systems.

  • Power and Ground Pins (VDD, VSS): Supply power and provide grounding for stable operation.
  • Data Pins (DQ0-DQ31): 32-bit wide data bus for high-speed data transfers.
  • Address and Command Pins: Control the address and operational commands for read/write cycles.
  • Clock Pins (CK, CK#): Provide the clock signal for synchronous data operations.
  • Control Pins (CS#, WE#, CAS#, RAS#): Manage chip select, write enable, and read/write operations.

The WFBGA-200 package offers a dense arrangement of pins for efficient signal routing, making it ideal for mobile and high-performance applications.

MT53D512M32D2DS-053 WT:D

Key Features

  • 16Gb Density: Provides 2GB of high-speed, low-power memory for mobile and embedded systems.
  • LPDDR4 Technology: Optimized for low power consumption with high data throughput, supporting clock speeds of up to 3200 MT/s.
  • Wide I/O Interface: 32-bit data bus width for fast and efficient data transfer.
  • Small Form Factor (WFBGA-200): Compact design for integration into space-constrained devices like smartphones, tablets, and IoT devices.
  • Power-Efficient Design: Low voltage operation (1.1V) for extended battery life in portable devices.
  • On-Die Termination (ODT): Improves signal integrity and reduces reflections on data lines.
  • Deep Power-Down Mode: Conserves power by shutting down non-essential functions when the memory is idle.

Application

  • Smartphones and Tablets: Provides high-performance memory for handling multitasking, graphics, and media applications in mobile devices.
  • Automotive Systems: Integrated into infotainment, driver assistance, and autonomous driving systems, requiring high-speed data access with low power consumption.
  • IoT Devices: Used in connected devices that demand efficient power consumption and compact form factors for reliable data processing.
  • Embedded Systems: Provides memory for industrial and consumer embedded systems, where high-speed, low-power operation is required.
  • Wearable Technology: Ideal for smartwatches and other wearables that need efficient memory in a compact size.

Functionality

The MT53D512M32D2DS-053 WT functions as a high-speed LPDDR4 memory module, delivering 2GB of memory for data storage and access in performance-driven, low-power applications. The module supports a wide range of clock speeds, up to 3200 MT/s, ensuring fast read/write operations. Its low voltage operation and advanced power-saving modes make it ideal for battery-powered devices, while the WFBGA-200 package provides a compact solution for space-limited designs.

Usage Guide

  • Integration: Ensure proper alignment of the WFBGA-200 package on the PCB, with proper routing of power, ground, and signal traces to maintain signal integrity.
  • Power Supply: The module operates at a low voltage of 1.1V for core functions, ensuring compatibility with modern low-power systems.
  • Clocking: Connect the clock pins (CK, CK#) for synchronized data operations, ensuring that the memory operates in sync with the system’s clock speed.
  • Thermal Management: Although designed for low power consumption, ensure adequate heat dissipation in high-performance applications by maintaining proper airflow and thermal management.
  • PCB Layout: Follow best practices for high-speed memory layout, including minimizing trace lengths and maintaining impedance control for critical signal lines.

Advantages and Disadvantages

Advantages

  • Low Power Consumption: Ideal for portable and battery-operated devices, maximizing energy efficiency while maintaining high performance.
  • High-Speed Data Transfer: Supports fast data transfer rates up to 3200 MT/s, ensuring smooth operation in demanding applications like gaming, video processing, and autonomous systems.
  • Compact Form Factor: The WFBGA-200 package allows for dense integration in space-constrained designs, such as smartphones and embedded systems.
  • Wide Range of Applications: Suitable for a variety of markets, including mobile, automotive, IoT, and industrial systems.

Disadvantages

  • Complex Integration: Requires careful PCB design and layout to ensure signal integrity and proper operation, particularly in high-speed, high-performance systems.
  • Package Complexity: The WFBGA-200 package requires advanced assembly techniques, which may increase manufacturing costs and complexity.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Mfr Micron Technology Inc. Packaging Tape & Reel (TR)
Part Status Active Memory Type Volatile
Memory Format DRAM Technology SDRAM - Mobile LPDDR4
Memory Size 16Gbit Memory Organization 512M x 32
Clock Frequency 1.866 GHz Voltage - Supply 1.1V
Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount
Package / Case 200-WFBGA Supplier Device Package 200-WFBGA (10x14.5)

Equivalent Parts

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

MT53D512M32D2DS-053 WT:D Equivalent Parts

For the MT53D512M32D2DS-053 WT:D component, you may consider these replacement and alterative parts.

Models Manufacturer Package/Case Description
K4B4G1646E-BYK0 SAMSUNG 96-ball FBGA A DDR3 SDRAM IC from Samsung that can be used as an alternative to the MT53D512M32D2DS-053 WT:D. It offers similar density, data bus width, and speed characteristics.
H5TC4G63AFR-PBA Hynix 96-ball FBGA Another DDR3 SDRAM IC option from Hynix that shares similar specifications with the MT53D512M32D2DS-053 WT:D and can be considered as an alternative in compatible applications.

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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MT53D512M32D2DS-053 WT:D

MT53D512M32D2DS-053 WT:D DDR SDRAM WFBGA-200 ROHS

Inventory:

5,487