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MT41K512M8RH-125 IT:E

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin FBGA Tray

Inventory:6,061

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Overview of MT41K512M8RH-125 IT:E

The MT41K512M8RH-125 IT:E is a high-density DDR3 SDRAM module designed for use in computing and embedded applications. It features high-speed data transfer capabilities and operates at a clock frequency of up to 800MHz.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • VDD:Power Supply Voltage
  • VSS:Ground
  • CK:Clock Input
  • CS:Chip Select
  • DM:Data Mask
  • RAS:Row Address Strobe
  • CAS:Column Address Strobe
  • WE:Write Enable
  • DQ:Data In/Out
  • DM:Data Mask
  • BA:Bank Address

Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the MT41K512M8RH-125 IT:E module for a more visual representation.

Key Features

  • High-Density DDR3 SDRAM: The MT41K512M8RH-125 IT:E offers high-density memory storage suitable for advanced computing applications.
  • High-Speed Operation: Operates at up to 800MHz clock frequency, enabling fast data processing and retrieval.
  • Low Power Consumption: Designed for efficiency with low power requirements, ideal for energy-conscious applications.
  • Wide Temperature Range: Supports operation over a wide temperature range, making it suitable for embedded applications.
  • Enhanced Signal Integrity: Incorporates features for improved signal integrity and reliability in data transmission.

Note:For detailed technical specifications,please refer to the MT41K512M8RH-125 IT:E datasheet.

Application

  • Computing Systems: Ideal for use in computing systems requiring high-speed and high-density memory solutions.
  • Embedded Applications: Suitable for embedded systems where space and power efficiency are critical factors.
  • Networking Equipment: Used in networking equipment for reliable data handling and processing.

Functionality

The MT41K512M8RH-125 IT:E module is a high-performance DDR3 SDRAM solution, providing reliable memory operations for diverse computing and embedded applications.

Usage Guide

  • Power Supply: Connect VDD and VSS to the appropriate power supply and ground connections.
  • Data Connections: Utilize the DQ pins for data input and output operations.
  • Control Signals: Manage RAS, CAS, WE, and other control signals for proper memory access and operation.

Frequently Asked Questions

Q:What is the maximum clock frequency of the MT41K512M8RH-125 IT:E?
A:The MT41K512M8RH-125 IT:E operates at a maximum clock frequency of 800MHz.

Q:Is the MT41K512M8RH-125 IT:E compatible with industrial temperature ranges?
A:Yes, the MT41K512M8RH-125 IT:E is designed to operate reliably across a wide temperature range, suitable for industrial and embedded applications.

Equivalent

For similar functionalities, consider these alternatives to the MT41K512M8RH-125 IT:E:

  • MT47H128M16RT-25E: A comparable high-density DDR3 SDRAM module from Micron offering similar performance and features.
  • W9751G6JB-25: This is a DDR3 SDRAM module from Winbond, suitable for applications requiring high-speed memory access.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category DRAM Mounting Style SMD/SMT
Package / Case FBGA-78 Series MT41K
Brand Micron Product Type DRAM
Subcategory Memory & Data Storage

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Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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packageimg

MT41K512M8RH-125 IT:E

DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V 78-Pin FBGA Tray

Inventory:

6,061