• MT29F4G08ABAEAWP:E 48-TFSOP
MT29F4G08ABAEAWP:E 48-TFSOP

MT29F4G08ABAEAWP:E

High-capacity flash storage device

Quantity Unit Price(USD) Ext. Price
1 $3.262 $3.26
10 $3.189 $31.89
30 $3.140 $94.20
100 $3.091 $309.10

Inventory:8,951

*The price is for reference only.
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Overview of MT29F4G08ABAEAWP:E

The MT29F4G08ABAEAWP:E is a NAND flash memory optimized for high-speed and low-voltage operations, providing excellent performance for various applications such as embedded systems, automotive, industrial, telecommunications, networking, and consumer electronics.

Pinout

The MT29F4G08ABAEAWP:E pinout refers to the configuration and function of each pin in its TSOP-48 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MT29F4G08ABAEAWP:E has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by Micron Technology to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Seamless Operation: The MT29F4G08ABAEAWP:E offers seamless operation, ensuring a smooth transition between read and write operations.
  • Enhanced Storage Solution: This NAND flash memory provides an enhanced storage solution for various applications requiring high-capacity storage.
  • Protected Data Integrity: The MT29F4G08ABAEAWP:E ensures protected data integrity through its advanced error correction mechanisms and robust data security features.
  • Easy Integration Process: The TSOP-48 package of the MT29F4G08ABAEAWP:E makes it easy to integrate into various systems, reducing design complexity and increasing overall system performance.
  • Extended Lifespan: This NAND flash memory has an extended lifespan, ensuring reliable operation over a long period without degradation in performance.
  • Flexible Voltage Range: The MT29F4G08ABAEAWP:E operates within a flexible voltage range, making it suitable for various applications and environments.
  • Reliable Performance: This NAND flash memory provides reliable performance under various operating conditions, ensuring consistent data storage and retrieval.
  • Efficient Data Transfer: The MT29F4G08ABAEAWP:E enables efficient data transfer between devices, reducing system latency and increasing overall system performance.
  • Low Power Consumption: This NAND flash memory has low power consumption, making it suitable for battery-powered or energy-efficient systems.
  • Advanced Technology Features: The MT29F4G08ABAEAWP:E incorporates advanced technology features such as high-speed interfaces and robust error correction mechanisms to ensure reliable data storage and retrieval.
  • Customizable Configuration: This NAND flash memory offers customizable configuration options, allowing designers to tailor the device's performance to specific application requirements.
  • Cost-Effective Solution: The MT29F4G08ABAEAWP:E provides a cost-effective solution for various applications requiring high-capacity storage and reliable data transfer.
  • High Memory Capacity: This NAND flash memory has a high memory capacity of 8GB, making it suitable for applications requiring large amounts of storage space.
  • Fast Read/Write Speeds: The MT29F4G08ABAEAWP:E offers fast read/write speeds, enabling efficient data transfer and retrieval in various applications.

Applications

The MT29F4G08ABAEAWP:E is suitable for various applications requiring high-capacity storage and reliable data transfer, including:

  • Embedded Systems: This NAND flash memory is ideal for embedded systems requiring large amounts of storage space and fast read/write speeds.
  • Automotive: The MT29F4G08ABAEAWP:E is suitable for automotive applications where high-capacity storage and reliable data transfer are critical.
  • Industrial: This NAND flash memory is ideal for industrial applications requiring large amounts of storage space, fast read/write speeds, and robust error correction mechanisms.
  • Telecommunications: The MT29F4G08ABAEAWP:E is suitable for telecommunications applications where high-capacity storage and reliable data transfer are critical.
  • Networking: This NAND flash memory is ideal for networking applications requiring large amounts of storage space, fast read/write speeds, and robust error correction mechanisms.
  • Consumer Electronics: The MT29F4G08ABAEAWP:E is suitable for consumer electronics applications where high-capacity storage and reliable data transfer are critical.

Equivalents

The MT29F4G08ABAEAWP:E has several equivalents in the market, including:

  • SanDisk iNAND 8GB: This NAND flash memory offers similar performance and capacity to the MT29F4G08ABAEAWP:E.
  • Toshiba TH58K2XJAPD8C: This NAND flash memory has a similar capacity and performance to the MT29F4G08ABAEAWP:E, but may have different pinout configurations.
  • Micron M45PE64GC6E: This NAND flash memory offers similar performance and capacity to the MT29F4G08ABAEAWP:E, but may have different power consumption characteristics.

MT29F4G08ABAEAWP:E

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Tray Product Status Obsolete
Programmabe Not Verified Memory Type Non-Volatile
Memory Format FLASH Technology FLASH - NAND
Memory Size 4Gbit Memory Organization 512M x 8
Memory Interface Parallel Voltage - Supply 2.7V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA) Mounting Type Surface Mount
Package / Case 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package 48-TSOP I
Base Product Number MT29F4G08

Warranty & Returns

Warranty, Returns, and Additional Information

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MT29F4G08ABAEAWP:E

High-capacity flash storage device

Inventory:

8,951