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MT29F1G01ABAFDWB-IT:F TR

SPI M78A NAND Flash Memory

Inventory:6,341

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Overview of MT29F1G01ABAFDWB-IT:F TR

The MT29F1G01ABAFDWB-IT:F TR is a NAND Flash memory IC that offers 1Gb of storage capacity. With its high-density storage and fast read/write speeds, this IC is ideal for use in various data storage and embedded system applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Power Supply
  • GND: Ground
  • D0-D7: Data Input/Output Lines
  • CE: Chip Enable
  • CLE: Command Latch Enable
  • ALE: Address Latch Enable
  • WE: Write Enable
  • RE: Read Enable
  • R/B: Ready/Busy

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MT29F1G01ABAFDWB-IT:F TR NAND Flash memory IC for a visual representation.

Key Features

  • 1Gb Storage Capacity: Offers a high-density storage solution suitable for various applications.
  • Fast Read/Write Speeds: Provides quick access to data for efficient operation.
  • Wide Operating Voltage Range: Compatible with a range of supply voltages for versatility.
  • Reliable Performance: Ensures data integrity and longevity for reliable operation.
  • Compact Package: Available in a space-saving form factor for easy integration into designs.

Note: For detailed technical specifications, please refer to the MT29F1G01ABAFDWB-IT:F TR datasheet.

Application

  • Data Storage Systems: Ideal for use in data storage systems such as solid-state drives and industrial memory solutions.
  • Embedded Systems: Suitable for embedded applications requiring reliable non-volatile memory.
  • Consumer Electronics: Used in consumer electronic devices for data storage and firmware storage.

Functionality

The MT29F1G01ABAFDWB-IT:F TR NAND Flash memory IC provides high-capacity and high-speed data storage capabilities, making it a versatile solution for various memory requirements.

Usage Guide

  • Power Supply: Connect VCC (Pin X) to the power supply voltage.
  • Data Connections: Utilize the D0-D7 pins for data input and output operations.
  • Control Signals: Apply appropriate signals to CE, WE, RE, ALE, and CLE pins for memory operations.

Frequently Asked Questions

Q: What is the erase/write cycle endurance of the MT29F1G01ABAFDWB-IT:F TR?
A: The MT29F1G01ABAFDWB-IT:F TR offers a high erase/write cycle endurance, ensuring long-term reliability for data storage applications.

Q: Can the MT29F1G01ABAFDWB-IT:F TR operate in extended temperature ranges?
A: Yes, the MT29F1G01ABAFDWB-IT:F TR is designed to operate within extended temperature ranges, making it suitable for industrial and automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the MT29F1G01ABAFDWB-IT:F TR:

  • S34ML01G100TFI000: A NAND Flash memory IC with comparable storage capacity and performance characteristics.
  • W25N01GV: This is a NAND Flash memory IC from Winbond, offering similar features and reliability to the MT29F1G01ABAFDWB-IT:F TR.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case U-PDFN-8
Series MT29F Memory Size 1 Gbit
Interface Type SPI Organization 1 G x 1
Timing Type Asynchronous Data Bus Width 1 bit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Supply Current - Max 35 mA Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Active Read Current - Max 35 mA
Brand Micron Maximum Clock Frequency 133 MHz
Memory Type NAND Moisture Sensitive Yes
Product NAND Flash Product Type NAND Flash
Standard Not Supported Factory Pack Quantity 4000
Subcategory Memory & Data Storage Unit Weight 0.006469 oz

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Warranty, Returns, and Additional Information

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MT29F1G01ABAFDWB-IT:F TR

SPI M78A NAND Flash Memory

Inventory:

6,341