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MRF6V2300NBR1

MRF6V2300NBR1 - RF MOSFET Transistors VHV6 300W TO272WB4N

Inventory:5,413

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Overview of MRF6V2300NBR1

The MRF6V2300NBR1 is a RF power transistor designed for high-power amplification in radio frequency applications. This transistor offers high gain and efficiency, making it suitable for use in amplifiers and transmitters.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GND: Ground connection
  • VDD: Drain voltage supply
  • VGG: Gate voltage supply
  • RF IN: Radio frequency input
  • RF OUT: Radio frequency output
  • VGG2: Second gate voltage supply
  • VDD2: Second drain voltage supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MRF6V2300NBR1 transistor for a visual representation.

Key Features

  • High Power RF Transistor: The MRF6V2300NBR1 is a high-power transistor capable of handling high RF power levels.
  • High Gain: This transistor offers high gain characteristics, ensuring efficient amplification in RF circuits.
  • Wide Frequency Range: It operates over a wide frequency range, making it versatile for various RF applications.
  • Robust Construction: The MRF6V2300NBR1 is built with robust materials for reliable performance in demanding environments.

Note: For detailed technical specifications, please refer to the MRF6V2300NBR1 datasheet.

Application

  • RF Amplification: Ideal for RF power amplification in radio transmitters and amplifiers.
  • Wireless Communication: Suitable for use in wireless communication systems requiring high-power RF signals.
  • Radar Systems: Used in radar systems for transmitting and amplifying RF signals.

Functionality

The MRF6V2300NBR1 RF power transistor is designed to amplify radio frequency signals with high gain and efficiency, making it a reliable component for RF applications.

Usage Guide

  • Power Supply: Connect the VDD and VGG pins to the appropriate supply voltages for operation.
  • RF Connections: Connect the RF input and output pins to the corresponding RF signal paths in the circuit.
  • Biasing: Ensure proper biasing by applying the required gate and drain voltages for optimal performance.

Frequently Asked Questions

Q: What is the maximum operating frequency of the MRF6V2300NBR1?
A: The MRF6V2300NBR1 can operate up to X GHz, depending on the specific operating conditions.

Q: Is the MRF6V2300NBR1 suitable for linear amplification?
A: Yes, the MRF6V2300NBR1 can be used for linear amplification applications with proper circuit design and biasing.

Equivalent

For similar functionalities, consider these alternatives to the MRF6V2300NBR1:

  • MRF6VP2600H: This RF power transistor offers similar high-power capabilities with enhanced efficiency.
  • MRF7S21170HSR5: A high-frequency RF transistor providing high gain and power output for RF systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors RoHS Details
Transistor Polarity N-Channel Technology Si
Vds - Drain-Source Breakdown Voltage 110 V Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Mounting Style SMD/SMT
Package / Case TO-272-4 Brand NXP Semiconductors
Channel Mode Enhancement Configuration Single Dual Drain Dual Gate
Height 2.64 mm Length 23.67 mm
Moisture Sensitive Yes Product Type RF MOSFET Transistors
Series MRF6V2300N Factory Pack Quantity 500
Subcategory MOSFETs Type RF Power MOSFET
Vgs - Gate-Source Voltage - 500 mV, 10 V Width 9.07 mm
Part # Aliases 935309671528 Unit Weight 0.067412 oz

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MRF6V2300NBR1

MRF6V2300NBR1 - RF MOSFET Transistors VHV6 300W TO272WB4N

Inventory:

5,413