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MRF316

Reliable, rugged design for wireless and communication systems

Quantity Unit Price(USD) Ext. Price
1 $53.736 $53.74
200 $20.795 $4,159.00
500 $20.065 $10,032.50
1000 $19.704 $19,704.00

Inventory:6,449

*The price is for reference only.
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Overview of MRF316

The MRF316 is a high-power NPN silicon transistor designed for RF power amplifier applications. It offers high power gain, efficiency, and reliability, making it suitable for use in various RF communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Emitter terminal
  • Base: Base terminal
  • Collector: Collector terminal
  • Collector: RF input/output connection
  • Base: Biasing and control input
  • Emitter: Emitter terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MRF316 transistor in an RF power amplifier circuit for better understanding.

Key Features

  • High Power Gain: The MRF316 offers high power gain, enhancing the signal amplification in RF circuits.
  • High Efficiency: This transistor provides high efficiency in converting DC power to RF output power.
  • Wide Frequency Range: With a broad frequency range, the MRF316 is suitable for various RF applications.
  • Temperature Stability: It exhibits good temperature stability for consistent performance over a range of operating conditions.
  • Reliable Operation: Designed for reliable and long-lasting operation in RF amplifier circuits.

Note: For detailed technical specifications, please refer to the MRF316 datasheet.

Application

  • RF Power Amplifiers: Ideal for use in RF power amplifiers for amplifying radio frequency signals.
  • Communication Systems: Suitable for integration into RF communication systems for signal transmission and reception.
  • Broadcasting Equipment: Used in broadcasting equipment for amplifying RF signals in radio and television broadcast systems.

Functionality

The MRF316 transistor is designed to provide high power gain and efficiency in RF power amplifier circuits, enabling reliable signal amplification for various communication applications.

Usage Guide

  • Biasing: Proper biasing of the base terminal is essential for optimal transistor performance.
  • Heat Dissipation: Ensure adequate heat sinking to maintain the transistor within its operating temperature range for reliable operation.
  • Matching Networks: Use appropriate matching networks to optimize the RF power transfer and impedance matching in the circuit.

Frequently Asked Questions

Q: Is the MRF316 suitable for linear amplifier applications?
A: Yes, the MRF316 is designed to provide linear amplification in RF power amplifier circuits.

Equivalent

For similar RF power amplifier applications, consider these alternatives to the MRF316:

  • MRF454: A high-power RF transistor with similar characteristics and performance to the MRF316 for RF amplifier designs.
  • MRF13750: This transistor offers high-power capabilities and efficiency for demanding RF power amplifier applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer MACOM Product Category RF Bipolar Transistors
RoHS Details Technology Si
Brand MACOM Product Type RF Bipolar Transistors
Factory Pack Quantity 20 Subcategory Transistors

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MRF316

Reliable, rugged design for wireless and communication systems

Inventory:

6,449