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MRF171

MRF171 RF Transistor

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Overview of MRF171

The MRF171 is a high-power, broadband N-channel enhancement-mode RF power field-effect transistor (FET) designed for various RF power amplification applications. It features high power gain, excellent thermal stability, and high efficiency, making it ideal for high-frequency RF amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Source (S): Source terminal for the FET
  • Gate (G): Gate terminal for controlling the FET
  • Drain (D): Drain terminal for the FET

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MRF171 FET for a visual representation.

Key Features

  • High Power Gain: The MRF171 offers high power gain, enabling efficient RF power amplification.
  • Broadband Operation: This FET is designed for broadband applications, suitable for a wide range of frequency bands.
  • Excellent Thermal Stability: With its advanced thermal design, the MRF171 ensures reliable performance under varying thermal conditions.
  • High Efficiency: This RF power FET provides high efficiency in converting DC power to RF power, minimizing power loss.

Note: For detailed technical specifications, please refer to the MRF171 datasheet.

Application

  • RF Power Amplification: Ideal for use in RF power amplifiers for applications such as wireless communication, radar systems, and RF heating.
  • Broadcasting: Suitable for use in RF broadcasting equipment and transmitters for high-power RF signal transmission.
  • RF Testing and Measurement: The MRF171 can be utilized in RF testing and measurement setups requiring high-power RF sources.

Functionality

The MRF171 is a high-power, broadband RF power FET designed to amplify RF signals with high efficiency and thermal stability. It delivers reliable performance in various RF amplification applications requiring high power gain.

Usage Guide

  • Power Supply: Provide the appropriate DC voltage and current to the drain terminal (D) for RF power amplification.
  • RF Input: Apply the input RF signal to the gate terminal (G) for amplification by the FET.
  • Output Connection: Connect the load or output network to the source terminal (S) for extracting the amplified RF signal.

Frequently Asked Questions

Q: What is the maximum operating frequency of the MRF171?
A: The MRF171 is designed for broadband operation and can efficiently operate over a wide range of frequencies, typically from HF to UHF bands.

Q: Is the MRF171 suitable for high-power RF transmitter applications?
A: Yes, the MRF171's high power gain and broadband operation make it suitable for high-power RF transmitter applications, including broadcasting and telecommunications.

Equivalent

For similar functionalities, consider these alternatives to the MRF171:

  • MRF170: A predecessor of the MRF171 with comparable performance characteristics and RF power amplification capabilities.
  • MRF173: This RF power FET offers similar broadband operation and high-power amplification features, suitable for RF transmitter applications.
  • MRF175: Designed for high-frequency RF power amplification, the MRF175 provides similar characteristics to the MRF171 for RF applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors RoHS Details
Transistor Polarity N-Channel Technology Si
Id - Continuous Drain Current 4.5 A Vds - Drain-Source Breakdown Voltage 65 V
Rds On - Drain-Source Resistance 0.7 mOhms Operating Frequency 200 MHz
Gain 15 dB Output Power 45 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Mounting Style SMD/SMT Package / Case 211-07-3
Brand Advanced Semiconductor, Inc. Configuration Single
Pd - Power Dissipation 115 W Product Type RF MOSFET Transistors
Factory Pack Quantity 1 Subcategory MOSFETs
Type RF Power MOSFET Vgs - Gate-Source Voltage 40 V
Vgs th - Gate-Source Threshold Voltage 6 V Unit Weight 0.297389 oz

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