• packageimg
packageimg

MRF1550FNT1

RF MOSFET Transistors

Inventory:9,133

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for MRF1550FNT1 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of MRF1550FNT1

The MRF1550FNT1 is a high-power N-channel RF transistor designed for use in high-frequency applications.This transistor is capable of delivering high output power and efficiency,making it ideal for RF power amplification in various communication systems.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • RF IN:RF Input Signal
  • GND:Ground Connection
  • VDD:Supply Voltage
  • RF OUT:RF Output
  • VGG:Gate Voltage
  • VD:Drain Voltage
  • RG:Gate Resistance
  • VDG:Gate-Drain Voltage
  • ID:Drain Current


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MRF1550FNT1 RF transistor for a visual representation.

Key Features

  • High Power Output:The MRF1550FNT1 offers high output power capabilities,ideal for RF power amplification.
  • High Efficiency:This RF transistor provides efficient power conversion,helping optimize the overall performance of RF systems.
  • Wide Frequency Range:With a broad frequency range,the MRF1550FNT1 is suitable for various high-frequency applications.
  • Enhanced Linearity:Designed for improved linearity,this transistor ensures accurate signal amplification.
  • Robust Construction:Featuring a rugged construction,the MRF1550FNT1 offers reliable operation in demanding environments.

Note:For detailed technical specifications,please refer to the MRF1550FNT1 datasheet.

Application

  • RF Power Amplification:Perfect for RF power amplification in communication systems,such as base stations and transmitters.
  • Wireless Communication:Suitable for use in wireless communication applications requiring high-power RF amplification.
  • Radar Systems:Ideal for radar systems and other high-frequency applications that demand high output power and efficiency.

Functionality

The MRF1550FNT1 N-channel RF transistor delivers high output power and efficiency,ensuring reliable amplification in high-frequency communication systems.

Usage Guide

  • RF Connection:Connect the RF input signal to the RF IN pin and the RF output to the RF OUT pin.
  • Power Supply:Apply the appropriate supply voltage(VDD)to power the transistor for operation.
  • Biasing:Ensure proper gate(G)and drain(D)biasing for optimal performance and efficiency.

Frequently Asked Questions

Q:Is the MRF1550FNT1 suitable for high-frequency radar applications?
A:Yes,the MRF1550FNT1 is designed for high-frequency applications,such as radar systems,that require high power output.

Equivalent

For similar functionalities,consider these alternatives to the MRF1550FNT1:

  • MRF151G:MRF151G is another high-power N-channel RF transistor offering similar performance characteristics to the MRF1550FNT1.
  • MRF1535:MRF1535 is a high-power RF transistor with comparable specifications and power output to the MRF1550FNT1.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF MOSFET Transistors RoHS Details
Transistor Polarity N-Channel Technology Si
Id - Continuous Drain Current 12 A Vds - Drain-Source Breakdown Voltage 40 V
Operating Frequency 175 MHz Gain 14.5 dB
Output Power 50 W Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Mounting Style SMD/SMT
Package / Case TO-272-6 Brand NXP Semiconductors
Channel Mode Enhancement Configuration Single
Height 2.69 mm Length 23.72 mm
Moisture Sensitive Yes Pd - Power Dissipation 165 W
Product Type RF MOSFET Transistors Series MRF1550N
Factory Pack Quantity 500 Subcategory MOSFETs
Transistor Type LDMOS FET Type RF Power MOSFET
Vgs - Gate-Source Voltage 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Width 6.45 mm Part # Aliases 935313626528
Unit Weight 0.045124 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.