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MR4A16BMA35

1Mx16 configuration

Inventory:9,346

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Overview of MR4A16BMA35

The MR4A16BMA35 is a high-speed synchronous static random access memory (SRAM) module designed for use in computing and networking applications. This memory module features a capacity of 4 Meg x 16 bits and operates at a clock frequency of 35 MHz, providing fast and reliable data storage and access.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Power Supply Voltage
  • GND: Ground
  • CE: Chip Enable
  • WE: Write Enable
  • OE: Output Enable
  • Address Inputs: A0-A12
  • Data Inputs/Outputs: DQ0-DQ15
  • NC: No Connection
  • VDDQ: Data Input/Output Buffer Supply Voltage

Circuit Diagram

Include a circuit diagram showing the connections and operation of the MR4A16BMA35 SRAM module for a visual representation.

Key Features

  • High-Speed Operation: The MR4A16BMA35 operates at a clock frequency of 35 MHz, providing fast data access for demanding applications.
  • Large Capacity: With a capacity of 4 Meg x 16 bits, this SRAM module offers ample storage space for data-intensive tasks.
  • Synchronous Interface: Features a synchronous interface for synchronized data transfers, ensuring data integrity and reliability.
  • Low Power Consumption: Designed for low power consumption, making it suitable for energy-efficient systems and portable devices.
  • Wide Voltage Range: Compatible with a wide voltage range, allowing flexibility in system design and integration.

Note: For detailed technical specifications, please refer to the MR4A16BMA35 datasheet.

Application

  • Cache Memory: Ideal for use as cache memory in computing systems to improve data access speeds.
  • Networking Equipment: Suitable for networking equipment requiring fast and reliable data storage for packet processing.
  • Embedded Systems: Used in embedded systems for data buffering and temporary storage of critical information.

Functionality

The MR4A16BMA35 SRAM module offers high-speed data storage and access capabilities, making it ideal for applications that demand rapid and efficient data handling.

Usage Guide

  • Power Supply: Apply the required power supply voltage to the VDD pin while ensuring a stable ground connection.
  • Control Signals: Utilize the CE, WE, and OE pins for chip enable, write enable, and output enable functions, respectively.
  • Data Handling: Connect the address and data input/output pins based on the system's addressing and data requirements.

Frequently Asked Questions

Q: What is the maximum clock frequency supported by the MR4A16BMA35?
A: The MR4A16BMA35 supports a maximum clock frequency of 35 MHz for high-speed operation.

Q: Is the MR4A16BMA35 compatible with low-power applications?
A: Yes, the MR4A16BMA35 is designed for low power consumption, making it suitable for energy-efficient and battery-powered applications.

Equivalent

For similar functionalities, consider these alternatives to the MR4A16BMA35:

  • MT4C4001J: A comparable high-speed SRAM module with a different capacity and voltage range, suitable for similar applications.
  • IS61WV102416BLL: This synchronous SRAM module offers similar performance and features to the MR4A16BMA35, providing reliable data storage solutions.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MRAM RoHS Details
Package / Case BGA-48 Interface Type Parallel
Memory Size 16 Mbit Organization 1 M x 16
Data Bus Width 16 bit Mounting Style SMD/SMT
Access Time 35 ns Supply Voltage - Min 3 V
Supply Voltage - Max 3.6 V Operating Supply Current 110 mA
Minimum Operating Temperature 0 C Maximum Operating Temperature + 70 C
Series MR4A16B Brand Everspin Technologies
Moisture Sensitive Yes Product Type MRAM
Factory Pack Quantity 240 Subcategory Memory & Data Storage
Unit Weight 0.275434 oz

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