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MPF960

High-power N-channel MOSFET for robust switching applications

Inventory:6,753

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Overview of MPF960

The MPF960 is a high-frequency N-channel JFET (junction field-effect transistor) designed for use in high-frequency amplifier and oscillator applications. It features high input impedance and low noise, making it suitable for low-power, high-gain amplifier designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Drain (D): Connection for drain terminal
  • Gate (G): Connection for gate terminal
  • Source (S): Connection for source terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MPF960 for a visual representation.

Key Features

  • High-Frequency Operation: The MPF960 is optimized for high-frequency applications, providing excellent performance in RF circuits.
  • Low Input Capacitance: This JFET offers low input capacitance, minimizing signal distortion and ensuring high-frequency signal integrity.
  • High Input Impedance: With its high input impedance, the MPF960 is suitable for impedance matching and high-impedance amplifier designs.
  • Low Noise: The low noise characteristics of the MPF960 make it ideal for low-power, high-gain amplifier applications in sensitive signal processing systems.
  • Wide Temperature Range: The MPF960 operates effectively across a wide temperature range, making it suitable for diverse environmental conditions.

Note: For detailed technical specifications, please refer to the MPF960 datasheet.

Application

  • High-Frequency Amplifiers: The MPF960 is commonly used in high-frequency amplifier designs for radio frequency (RF) and communication systems.
  • Oscillator Circuits: This JFET is suitable for oscillator circuits in RF applications, providing stable and high-frequency oscillation.
  • Input Stage for RF Systems: The high input impedance of the MPF960 makes it suitable for use as an input stage in RF signal processing systems.

Functionality

The MPF960 N-channel JFET is designed to provide high input impedance and low noise in high-frequency amplifier and oscillator applications. It offers reliable and efficient signal amplification and processing for RF systems.

Usage Guide

  • Connection: Connect the drain, gate, and source terminals of the MPF960 to the corresponding circuit components based on the specific application requirements.
  • Biasing: Follow appropriate biasing configurations to ensure the JFET operates within its specified parameters.
  • Signal Amplification: Utilize the MPF960 in amplifier or oscillator circuits to amplify high-frequency signals with low noise.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the MPF960?
A: The MPF960 is designed for high-frequency operation and can support frequency ranges commonly used in RF and communication systems.

Q: Can the MPF960 be used in low-power applications?
A: Yes, the MPF960's low noise and high input impedance make it suitable for low-power amplifier applications.

Equivalent

For similar functionalities, consider these alternatives to the MPF960:

  • 2N5457: A comparable N-channel JFET with high input impedance and suitable for high-frequency amplifier applications.
  • MPF102: This is another N-channel JFET commonly used in high-frequency amplifier and oscillator circuits, offering similar performance characteristics to the MPF960.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 2 A
Rds On - Drain-Source Resistance 1.7 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Enhancement
Brand onsemi Configuration Single
Forward Transconductance - Min 0.38 S Height 5.33 mm
Length 5.2 mm Product Type MOSFET
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Width 4.19 mm
Unit Weight 0.000282 oz

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MPF960

High-power N-channel MOSFET for robust switching applications

Inventory:

6,753