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MMUN2213LT1G

Low power consumption digital transistor with leakage current of 500 nanoamps

Inventory:8,406

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Overview of MMUN2213LT1G

The MMUN2213LT1G is a NPN Bipolar Transistor designed for use in various electronic applications. This transistor features a high current capability and low saturation voltage, making it suitable for switching and amplification purposes.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Current comes out of this pin
  • Base (B): Controls the current flow between emitter and collector
  • Emitter (E): Current goes into this pin


Circuit Diagram

Incorporate a circuit diagram that illustrates the connections and operation of the MMUN2213LT1G transistor for a more visual representation.

Key Features

  • NPN Bipolar Transistor: The MMUN2213LT1G is an NPN type transistor, ideal for amplification and switching applications.
  • High Current Capability: This transistor can handle high currents, enabling it to drive loads effectively.
  • Low Saturation Voltage: The low saturation voltage of the MMUN2213LT1G results in minimal power dissipation during operation.
  • Compact Package: The transistor is housed in a small package, making it suitable for compact electronic designs.
  • Robust Construction: The MMUN2213LT1G is designed to withstand various operating conditions, ensuring reliable performance.

Note: For detailed technical specifications, please refer to the MMUN2213LT1G datasheet.

Application

  • Switching Circuits: The MMUN2213LT1G can be used in switching circuits to control the flow of current.
  • Amplification: This transistor is suitable for amplifying signals in audio and radio frequency applications.
  • Pulse Circuits: The MMUN2213LT1G is commonly employed in pulse circuits for generating and detecting signals.

Functionality

The MMUN2213LT1G transistor acts as a solid-state switch or amplifier, allowing for efficient control of current flow in electronic circuits .

Usage Guide

  • Collector Connection: Connect the load or output to the Collector (C) pin of the MMUN2213LT1G.
  • Base Control: Apply the input signal or control voltage to the Base (B) pin to regulate the current flow between the Emitter and Collector.
  • Emitter Connection: Connect the Emitter (E) pin to the ground or reference point of the circuit.

Frequently Asked Questions

Q: Is the MMUN2213LT1G suitable for high-frequency applications?
A: Yes, the MMUN2213LT1G can be used in high-frequency applications due to its fast switching speed and low saturation voltage.

Equivalent

For similar functionalities, consider these alternatives to the MMUN2213LT1G:

  • 2N2222: A commonly used NPN transistor with similar characteristics to the MMUN2213LT1G.
  • BC547: Another NPN transistor suitable for general-purpose amplification and switching applications.
  • 2N3904: This NPN transistor is widely used in low-power amplification circuits due to its high gain and low noise characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
IC Continuous (A) 0.1 V(BR)CEO Min (V) 50
hFE Min 80 R1 (kΩ) 47
R2 (kΩ) 47 R1/R2 Typ 1
Vi(off) Max (V) 0.8 Vi(on) Min (V) 3
Pricing ($/Unit) $0.0116Sample

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MMUN2213LT1G

Low power consumption digital transistor with leakage current of 500 nanoamps

Inventory:

8,406