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MMSS8550-H-TP

SOT-23-3 Package

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.018 $3.60
600 $0.016 $9.60
3000 $0.014 $42.00
9000 $0.012 $108.00
21000 $0.011 $231.00

Inventory:8,473

*The price is for reference only.
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Overview of MMSS8550-H-TP

The MMSS8550-H-TP is a PNP Silicon Epitaxial Transistor designed for various amplifier and switching applications in electronic circuits. This transistor offers high current capability and low saturation voltage, making it suitable for use in a wide range of circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Key Features

  • High Current Capability: The MMSS8550-H-TP transistor can handle high currents, making it suitable for power applications.
  • Low Saturation Voltage: The low saturation voltage of this transistor helps reduce power losses in switching applications.
  • PNP Silicon Epitaxial Transistor: The PNP configuration of this transistor allows for easy integration into both amplifier and switching circuits.
  • Compact Size: The MMSS8550-H-TP comes in a small form factor, making it suitable for space-constrained applications.

Note: For detailed technical specifications, please refer to the MMSS8550-H-TP datasheet.

Applications

  • Amplifier Circuits: The MMSS8550-H-TP can be used in amplifier circuits to amplify signals with high current requirements.
  • Switching Circuits: This transistor is ideal for use in switching circuits where low saturation voltage is crucial for efficient operation.
  • Power Management: The high current capability of the MMSS8550-H-TP makes it suitable for power management applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 25 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1.5 A Pd - Power Dissipation 625 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMSS8550
Brand Micro Commercial Components (MCC) DC Collector/Base Gain hfe Min 40
DC Current Gain hFE Max 350 Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Unit Weight 0.000282 oz

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