• MMDT5451-7-F SOT-363-6
MMDT5451-7-F SOT-363-6

MMDT5451-7-F

Diodes Inc presents the MMDT5451-7-F

Inventory:9,357

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Overview of MMDT5451-7-F

The MMDT5451-7-F is a bipolar transistor array optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The MMDT5451-7-F pinout refers to the configuration and function of each pin in its SOT-363 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MMDT5451-7-F has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • PNP transistor with a collector current of 500 mA: Designed for general purpose amplifier and switching applications, this feature provides high collector current capability and low collector-emitter saturation voltage.
  • High-speed operation up to 300 MHz: This feature enables the MMDT5451-7-F to handle high-frequency signals with minimal distortion and noise.
  • Low-voltage operation down to 160V: This feature makes the MMDT5451-7-F suitable for applications that require low voltage supply, such as battery-powered devices or systems with limited power sources.
  • Small and thin package (SOT-23): The compact size of this package allows for easy mounting and installation in a variety of applications, including portable electronics and IoT devices.
  • Compliant with RoHS and lead-free regulations: This feature ensures that the MMDT5451-7-F meets environmental and safety standards for use in a wide range of applications.

Applications

  • Audio amplifiers: The MMDT5451-7-F can be used to amplify audio signals in portable devices, such as headphones or speakers.
  • Mixers: This component is suitable for use in mixer circuits that require high-speed and low-voltage operation.
  • Sensors: The MMDT5451-7-F can be used to amplify sensor signals in applications such as industrial automation or medical devices.
  • Signal processing circuits: This component is suitable for use in signal processing circuits that require high-speed and low-voltage operation, such as analog-to-digital converters (ADCs) or digital-to-analog converters (DACs).
  • Pulse and waveform generators: The MMDT5451-7-F can be used to generate pulses and waveforms in applications such as radar systems or communication devices.

Advantages and Disadvantages

Advantages

  • High-speed operation up to 300 MHz: This feature enables the MMDT5451-7-F to handle high-frequency signals with minimal distortion and noise.
  • Low-voltage operation down to 160V: This feature makes the MMDT5451-7-F suitable for applications that require low voltage supply, such as battery-powered devices or systems with limited power sources.
  • Small and thin package (SOT-23): The compact size of this package allows for easy mounting and installation in a variety of applications, including portable electronics and IoT devices.

Disadvantages

  • Sensitivity to temperature changes: The MMDT5451-7-F may be affected by temperature changes, which can impact its performance and reliability.
  • Limited current handling: This component has a limited current handling capacity, which may restrict its use in applications that require high currents.

Equivalents

The MMDT5451-7-F is equivalent to other bipolar transistor arrays with similar specifications and performance characteristics. Some examples of equivalent components include:

  • BFQ5N10L
  • 2N3906
  • BC557C

Frequently Asked Questions

Q: What is the maximum collector current of the MMDT5451-7-F?
A: The maximum collector current of the MMDT5451-7-F is 500 mA.

Q: What is the minimum voltage required for operation?
A: The minimum voltage required for operation is 160V.

Q: Is the MMDT5451-7-F suitable for high-frequency applications?
A: Yes, the MMDT5451-7-F is designed for high-speed operation up to 300 MHz and can handle high-frequency signals with minimal distortion and noise.

Q: Can the MMDT5451-7-F be used in battery-powered devices?
A: Yes, the MMDT5451-7-F is suitable for use in battery-powered devices due to its low-voltage operation down to 160V.

MMDT5451-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 1 NPN, 1 PNP
Current - Collector (Ic) (Max) 200mA Voltage - Collector Emitter Breakdown (Max) 160V, 150V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA / 500mV @ 5mA, 50mA Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V / 60 @ 10mA, 5V Power - Max 200mW
Frequency - Transition 300MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 Base Product Number MMDT5451

Warranty & Returns

Warranty, Returns, and Additional Information

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MMDT5451-7-F

Diodes Inc presents the MMDT5451-7-F

Inventory:

9,357