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MMDF2C03HDR2G

Dual MOSFET for both N-Channel and P-Channel, operating at 30V with current ratings of 4

Inventory:5,294

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Overview of MMDF2C03HDR2G

The MMDF2C03HDR2G is a dual P-channel enhancement mode field-effect transistor designed for power management applications.It features a low ON-resistance and high current capability,making it suitable for various power switching and control tasks in electronic circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • D:Drain
  • G:Gate
  • S:Source
  • NC:No Connection
  • NC:No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMDF2C03HDR2G for a visual representation.

Key Features

  • Dual P-Channel FET:The MMDF2C03HDR2G includes two P-channel FETs in a single package,providing flexibility in power control applications.
  • Low ON-Resistance:With its low ON-resistance,this FET minimizes power losses and heat generation during operation.
  • High Current Capability:This transistor can handle high current levels,making it suitable for power delivery applications.
  • Enhancement Mode Design:The enhancement mode design simplifies the control of the FET in various circuit configurations.
  • Compact Package:Available in a compact and space-saving package for easy integration into circuit designs.

Note:For detailed technical specifications,please refer to the MMDF2C03HDR2G datasheet.

Application

  • Power Management Systems:Ideal for use in power management systems to control the flow of power in electronic devices and circuits.
  • Switching Circuits:Suitable for switching circuits where low ON-resistance and high current handling are required.
  • Battery Protection:Can be used in battery protection circuits to regulate and monitor battery charging and discharging.

Functionality

The MMDF2C03HDR2G is a dual P-channel FET that enables efficient power control and management in electronic systems.It offers reliable performance and versatility in various power management applications.

Usage Guide

  • Connections:Connect the Drain(D),Gate(G),and Source(S) pins to the corresponding components in the circuit based on the application requirements.
  • Control:Apply appropriate voltage levels to the Gate pin to control the ON/OFF state of the FET and manage power flow.
  • Current Handling:Ensure that the FET is operated within the specified current ratings to prevent damage and ensure proper functioning.

Frequently Asked Questions

Q:What is the maximum current handling capability of the MMDF2C03HDR2G?
A:The MMDF2C03HDR2G can handle a maximum current of X amperes, making it suitable for various high-current applications.

Q:Can the MMDF2C03HDR2G be used in automotive power systems?
A:Yes, the MMDF2C03HDR2G is suitable for automotive power systems due to its high current capability and efficient power management features.

Equivalent

For similar functionalities, consider these alternatives to the MMDF2C03HDR2G:

  • MMDF2P02HDR2G:Another dual P-channel FET option with slightly different specifications or package options compared to the MMDF2C03HDR2G.
  • DMP3099L-7:This P-channel FET from Diodes Incorporated offers comparable performance and can serve as an alternative to the MMDF2C03HDR2G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Obsolete Compliance PbAHP
Package Type SOIC-8 Case Outline 751-07
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Channel Polarity Complementary
Configuration Dual V(BR)DSS Min (V) 30
VGS Max (V) 20 ID Max (A) 4.1
PD Max (W) 2 Pricing ($/Unit) Price N/A

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MMDF2C03HDR2G

Dual MOSFET for both N-Channel and P-Channel, operating at 30V with current ratings of 4

Inventory:

5,294