• MMBTA06-7-F SOT23-3
MMBTA06-7-F SOT23-3


Trans GP BJT NPN 80V 0.5A 350mW 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.020 $4.00
600 $0.018 $10.80
3000 $0.016 $48.00
9000 $0.015 $135.00
21000 $0.014 $294.00


*The price is for reference only.
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Overview of MMBTA06-7-F

The MMBTA06-7-F is a high-performance NPN transistor designed for general-purpose amplification and switching applications. This transistor offers reliable operation and can be used in a wide range of electronic circuits for signal processing and control.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMBTA06-7-F transistor for a visual representation.

Key Features

  • High Gain: The MMBTA06-7-F offers high amplification capabilities, making it suitable for signal amplification applications.
  • Low Noise: With low noise characteristics, this transistor is ideal for applications requiring clean signal processing.
  • Fast Switching Speed: The MMBTA06-7-F features fast switching speeds, enabling rapid on/off operations in electronic circuits.
  • Wide Operating Temperature Range: This transistor can operate efficiently across a wide temperature range, ensuring performance stability in various environments.
  • Compact Package: Available in a small and space-saving package, the MMBTA06-7-F is easy to integrate into circuit designs with limited space.

Note: For detailed technical specifications, please refer to the MMBTA06-7-F datasheet.


  • Signal Amplification: Ideal for amplifying weak signals in audio and radio frequency applications.
  • Switching Circuits: Suitable for use in switching applications for turning components on or off in electronic systems.
  • Oscillator Circuits: Can be used in oscillator circuits for generating specific frequencies in electronic devices.


The MMBTA06-7-F NPN transistor provides reliable amplification and switching functionalities, making it a versatile component in electronic circuits for various applications.

Usage Guide

  • Connection: Connect the Emitter(E), Base(B), and Collector(C) pins according to the circuit diagram or application requirements.
  • Biasing: Apply appropriate biasing voltages to the Base and Collector pins to control the transistor's amplification or switching behavior.
  • Load Connection: Connect the load to the Collector pin to utilize the amplified or switched signal output.


For alternative NPN transistors with similar features, consider the following options:

  • PN2222: A widely used general-purpose NPN transistor with comparable specifications to the MMBTA06-7-F.
  • 2N3904: Another common NPN transistor suitable for amplification and switching applications, offering similar performance to the MMBTA06-7-F.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 80 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 4 V Collector-Emitter Saturation Voltage 250 mV
Maximum DC Collector Current 500 mA Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 100 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBTA06
Brand Diodes Incorporated Continuous Collector Current 500 mA
Height 1 mm Length 3.05 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.4 mm Unit Weight 0.000282 oz

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