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MMBTA05-7-F

Bipolar (BJT) Single Transistor, NPN, 60 V, 500 mA, 350 mW, SOT-23, Surface Mount

Inventory:8,137

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Overview of MMBTA05-7-F

Features• Epitaxial Planar Die Construction• Ideal for Low Power Amplification and Switching• Complementary PNP Type: MMBTA55 & MMBTA56• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)• Halogen and Antimony Free. “Green” Device (Note 3)• Qualified to AEC-Q101 Standards for High Reliability• PPAP capable (Note 4)

Key Features

  • Epitaxial Planar Die Construction
  • Complementary PNP Type Available (MMBTA55 / MMBTA56)
  • Ideal for Low Power Amplification and Switching
  • Lead, Halogen and Antimony Free, RoHS Compliant (Note 3)
  • "Green" Device (Note 4)
  • Qualified to AEC-Q101 Standards for High Reliability
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors Mfr Diodes Incorporated
Series - Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA Voltage - Collector Emitter Breakdown (Max) 60 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V Power - Max 300 mW
Frequency - Transition 100MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3

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Warranty, Returns, and Additional Information

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