• packageimg
packageimg

MMBT2222AT-7-F

RL NPN Small Signal Transistor in SOT-523 Package

Quantity Unit Price(USD) Ext. Price
10 $0.038 $0.38
100 $0.031 $3.10
300 $0.027 $8.10
3000 $0.024 $72.00
6000 $0.022 $132.00
9000 $0.020 $180.00

Inventory:9,131

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for MMBT2222AT-7-F using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of MMBT2222AT-7-F

The MMBT2222AT-7-F is a NPN bipolar junction transistor (BJT) designed for general purpose switching and amplification applications. This transistor features a maximum current rating of 600mA and a maximum voltage rating of 40V, making it suitable for various low-power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and usage of the MMBT2222AT-7-F transistor for a better understanding of its application.

Key Features

  • NPN Transistor: The MMBT2222AT-7-F is an NPN type transistor suitable for switching and amplification tasks.
  • Low Power: This transistor is designed for low-power applications with a maximum current rating of 600mA.
  • Voltage Rating: The MMBT2222AT-7-F can handle voltages up to 40V, providing flexibility in circuit design.
  • Small SOT-23 Package: Available in a compact SOT-23 package, ideal for space-constrained electronic designs.

Note: For detailed technical specifications, please refer to the MMBT2222AT-7-F datasheet.

Application

  • Switching Circuits: Ideal for use in small signal switching circuits due to its NPN transistor configuration.
  • Amplification: Suitable for amplifying weak signals in audio and other low-power applications.
  • PWM Control: Can be used in pulse-width modulation (PWM) control circuits for varying the power delivered to loads.

Functionality

The MMBT2222AT-7-F NPN transistor serves as a versatile component in electronic circuits, offering both switching and amplification capabilities for a range of applications.

Usage Guide

  • Identify Pins: The B pin is the base, the C pin is the collector, and the E pin is the emitter.
  • Voltage and Current: Ensure that the voltage and current requirements of your circuit do not exceed the ratings of the transistor.
  • Proper Biasing: Properly bias the transistor to ensure correct operation in your circuit.

Frequently Asked Questions

Q: What is the maximum current rating of the MMBT2222AT-7-F?
A: The MMBT2222AT-7-F has a maximum current rating of 600mA.

Q: Is the MMBT2222AT-7-F suitable for high-power applications?
A: No, this transistor is designed for low-power applications with a maximum voltage rating of 40V.

Equivalent

For similar functionalities, consider these alternatives to the MMBT2222AT-7-F:

  • 2N2222: A commonly used NPN transistor with similar characteristics to the MMBT2222AT-7-F.
  • BC337: This NPN transistor is another alternative suitable for switching and amplification tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-523-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 600 mA Pd - Power Dissipation 150 mW
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBT2222
Brand Diodes Incorporated Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 75 DC Current Gain hFE Max 375
Height 0.75 mm Length 1.6 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 0.8 mm Unit Weight 0.000071 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

MTP10N40E

MTP10N40E

N-CHANNEL POWER MOSFET
MJD31CT4

MJD31CT4

NPN Bipolar Junction Transistor, TO-252 Type
VN0300M

VN0300M

Power MOSFET (N-Channel)
PHKD13N03LT

PHKD13N03LT

An 8-pin small-outline (SO) package houses this N-channel MOSFET, rated for 30 volts and a maximum current of 10.4 amps, identified as PHKD13N03LT
NESG270034-T1-AZ

NESG270034-T1-AZ

Description of NESG270034-T1-AZ: This product operates at 9
BSP149H6327XTSA1

BSP149H6327XTSA1

Ruggedized transistor suitable for harsh industrial and automotive environment