• MMBT2222A-7-F SOT23-3
MMBT2222A-7-F SOT23-3


Bipolar Transistors - BJT 40V 300mW

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.019 $3.80
600 $0.017 $10.20
3000 $0.014 $42.00
9000 $0.012 $108.00
21000 $0.012 $252.00


*The price is for reference only.
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Overview of MMBT2222A-7-F

The MMBT2222A-7-F is a general-purpose NPN transistor in a SOT-23 package, designed for amplification and switching applications. It is commonly used in a variety of electronic circuits due to its high amplification factor and low saturation voltage.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMBT2222A-7-F transistor for a visual representation.

Key Features

  • NPN Transistor: The MMBT2222A-7-F is an NPN transistor suitable for general amplification and switching purposes.
  • High Amplification Factor: This transistor offers a high current gain, making it ideal for amplification applications.
  • Low Saturation Voltage: With a low saturation voltage, the MMBT2222A-7-F provides efficient switching performance.
  • SOT-23 Package: The SOT-23 packaging enables compact and space-saving designs in electronic circuits.

Note: For detailed technical specifications, please refer to the MMBT2222A-7-F datasheet.


  • Signal Amplification: Ideal for amplifying weak signals in audio and radio frequency circuits.
  • Switching Circuits: Suitable for use in electronic switches and digital logic circuits.
  • Oscillator Circuits: Can be used in oscillator circuits for generating waveforms in electronic devices.


The MMBT2222A-7-F NPN transistor is commonly utilized for signal amplification and switching tasks, providing reliable performance in various electronic applications.

Usage Guide

  • Emitter (E): Connect to the ground or circuit common.
  • Base (B): Control the transistor by applying input signals to the base terminal.
  • Collector (C): Output terminal for amplified or switched signals.

Frequently Asked Questions

Q: What is the maximum collector current of the MMBT2222A-7-F transistor?
A: The MMBT2222A-7-F can handle a maximum collector current of approximately 600mA.

Q: Is the MMBT2222A-7-F suitable for high-frequency applications?
A: While the MMBT2222A-7-F can be used in moderate frequency applications, it may not be ideal for very high-frequency circuits due to its transition frequency limitations.


For similar functionalities, consider these alternatives to the MMBT2222A-7-F:

  • 2N2222: A widely used NPN transistor with similar characteristics to the MMBT2222A-7-F.
  • BC337: This is another NPN transistor commonly used for amplification and switching purposes.



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 1 V
Maximum DC Collector Current 600 mA Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 300 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBT2222
Brand Diodes Incorporated Continuous Collector Current 600 mA
DC Current Gain hFE Max 300 Height 1 mm
Length 3.05 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.4 mm
Unit Weight 0.000282 oz

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