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MMBFJ310

Trans RF FET N-CH 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
5 $0.289 $1.44
50 $0.232 $11.60
150 $0.207 $31.05
500 $0.177 $88.50
3000 $0.164 $492.00
6000 $0.155 $930.00

Inventory:6,783

*The price is for reference only.
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Overview of MMBFJ310

The MMBFJ310 is an N-channel JFET transistor designed for low-power, high-gain amplifier and switching applications. This transistor features low noise and high input impedance, making it suitable for use in audio amplifiers, signal processing circuits, and voltage-controlled switches.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • G: Gate
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMBFJ310 transistor for a visual representation.

Key Features

  • N-Channel JFET Transistor: The MMBFJ310 is an N-channel JFET for use in various amplifier and switching circuits.
  • Low Noise: This transistor offers low noise characteristics, making it ideal for audio applications.
  • High Input Impedance: With a high input impedance, the MMBFJ310 is suitable for high-gain amplification.
  • Low Power Consumption: The MMBFJ310 operates at low power levels, making it energy-efficient.
  • Wide Operating Voltage Range: This transistor can operate within a wide voltage range, providing flexibility in circuit design.

Note: For detailed technical specifications, please refer to the MMBFJ310 datasheet.

Application

  • Audio Amplifiers: Well-suited for low-power audio amplifier designs requiring high input impedance.
  • Signal Processing Circuits: Used in various signal processing circuits where low noise is essential.
  • Voltage-Controlled Switches: The MMBFJ310 can be employed in voltage-controlled switch circuits for electronic control applications.

Functionality

The MMBFJ310 N-channel JFET transistor offers high gain and low noise characteristics, making it a versatile component for audio amplification and signal processing applications.

Usage Guide

  • Connection: Connect the Drain (D) to the load, Gate (G) to the input signal, and Source (S) to the ground.
  • Biasing: Proper biasing of the Gate terminal ensures optimal transistor performance in amplifier circuits.
  • Voltage Levels: Ensure that the operating voltage levels are within the specified range for reliable operation.

Frequently Asked Questions

Q: What is the maximum power dissipation of the MMBFJ310?
A: The MMBFJ310 can typically dissipate around 350mW of power.

Q: Can the MMBFJ310 be used in high-frequency applications?
A: The MMBFJ310 is more suitable for low to moderate frequency applications due to its inherent characteristics.

Equivalent

For similar functionalities, consider these alternatives to the MMBFJ310:

  • 2N5457: A comparable N-channel JFET transistor with similar characteristics to the MMBFJ310.
  • J113: This N-channel JFET provides similar functionality and can be used as an alternative to the MMBFJ310 in certain applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category JFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Configuration Single Vds - Drain-Source Breakdown Voltage 25 V
Vgs - Gate-Source Breakdown Voltage - 25 V Gate-Source Cutoff Voltage - 6.5 V
Id - Continuous Drain Current 60 mA Pd - Power Dissipation 350 mW
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series MMBFJ310 Brand onsemi / Fairchild
Forward Transconductance - Min 0.008 S to 0.018 S Operating Temperature Range - 55 C to + 150 C
Product Type JFETs Factory Pack Quantity 3000
Subcategory Transistors Type JFET
Part # Aliases MMBFJ310_NL Unit Weight 0.001093 oz

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