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MMBF2201NT1G

MOSFET with N-Channel Configuration

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Overview of MMBF2201NT1G

The MMBF2201NT1G is an N-channel JFET transistor designed for various low-power switching and amplification applications. It offers high input impedance and low output capacitance, making it suitable for use in signal amplification and general switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • D: Drain
  • S: Source
  • G: Gate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MMBF2201NT1G JFET for a visual representation.

Key Features

  • N-Channel JFET: Provides N-channel junction field-effect transistor functionality for signal amplification and switching.
  • High Input Impedance: The JFET offers high input impedance, making it suitable for low-power amplifier circuits.
  • Low Output Capacitance: With low output capacitance, it is appropriate for high-frequency signal processing.
  • Small Package: Available in a compact SOT-23 surface-mount package for space-constrained applications.

Note: For detailed technical specifications, please refer to the MMBF2201NT1G datasheet.

Application

  • Signal Amplification: Suitable for use in low-power signal amplification circuits due to its high input impedance.
  • Switching Circuits: Can be used in various low-power switching applications where high input impedance is beneficial.

Functionality

The MMBF2201NT1G N-channel JFET transistor provides high input impedance and low output capacitance, making it versatile for signal amplification and low-power switching applications.

Usage Guide

  • Connection: Connect the source (S) and drain (D) pins appropriately according to the circuit requirements.
  • Gate Biasing: Apply the correct biasing voltage to the gate (G) pin for desired amplification or switching behavior.

Frequently Asked Questions

Q: What is the maximum power rating for the MMBF2201NT1G?
A: The maximum power dissipation for the MMBF2201NT1G is typically around 360mW.

Q: Can the MMBF2201NT1G be used in high-frequency applications?
A: Yes, the low output capacitance of the MMBF2201NT1G makes it suitable for high-frequency signal processing.

Equivalent

For similar functionalities, consider these alternatives to the MMBF2201NT1G:

  • 2N5457: This is another N-channel JFET with similar characteristics and usage in low-power applications.
  • J112: An N-channel JFET suitable for low-power amplification and switching, offering similar performance to the MMBF2201NT1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active, Not Rec Compliance PbAHP
Package Type SC-70-3 / SOT-323-3 Case Outline 419-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 20
VGS Max (V) 20 VGS(th) Max (V) 2.4
ID Max (A) 0.3 PD Max (W) 0.15
RDS(on) Max @ VGS = 4.5 V (mΩ) 1400 RDS(on) Max @ VGS = 10 V (mΩ) 1000
Ciss Typ (pF) 45 Pricing ($/Unit) $0.0807Sample

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