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MJW16212

ROHS Compliant Bipolar Transistors

Quantity Unit Price(USD) Ext. Price
200 $4.891 $978.20
500 $4.718 $2,359.00
1000 $4.634 $4,634.00
1 $12.636 $12.64

Inventory:8,904

*The price is for reference only.
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Overview of MJW16212

The MJW16212 is a high-speed, high-voltage, NPN bipolar power transistor designed for use in power amplifier applications. It features a maximum collector-emitter voltage of 120V and a continuous collector current of 12A, making it suitable for medium to high-power amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MJW16212 transistor for a visual representation.

Key Features

  • High Voltage Capability: The MJW16212 can handle voltages up to 120V, allowing for high-power applications.
  • High Current Capacity: With a continuous collector current of 12A, this transistor can deliver substantial power output.
  • Fast Switching Speed: The high-speed performance of the MJW16212 makes it suitable for applications requiring rapid switching.
  • Low Saturation Voltage: The transistor exhibits low saturation voltage, reducing power loss during operation.
  • Robust Construction: Designed for reliability, the MJW16212 features a sturdy construction to ensure long-term performance.

Note: For detailed technical specifications, please refer to the MJW16212 datasheet.

Application

  • Power Amplification: Ideal for use in power amplifiers and audio amplification systems.
  • Switching Circuits: Suitable for switching applications where high voltage and current capabilities are required.
  • Motor Control: Can be used in motor control circuits for driving and controlling high-power motors.

Functionality

The MJW16212 NPN transistor is designed to amplify power signals with high efficiency and reliability. It serves as a key component in power amplification and switching circuits, delivering robust performance under demanding conditions.

Usage Guide

  • Mounting: Ensure proper heat sinking to manage the heat dissipation of the transistor during operation.
  • Voltage and Current: Adhere to the maximum voltage and current ratings specified in the datasheet for safe operation.
  • Base Resistor: Use an appropriate base resistor to control the base current and ensure proper transistor switching.

Frequently Asked Questions

Q: What is the maximum voltage rating of the MJW16212?
A: The MJW16212 has a maximum collector-emitter voltage of 120V, allowing for high-voltage applications.

Q: Is the MJW16212 suitable for high-power audio amplification?
A: Yes, the MJW16212 is well-suited for high-power audio amplification due to its high voltage and current handling capabilities.

Equivalent

For similar functionalities, consider these alternatives to the MJW16212:

  • TIP3055: A power NPN transistor with comparable voltage and current ratings suitable for power amplification.
  • MJL1302A: This high-voltage NPN transistor offers similar performance characteristics to the MJW16212 for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SCANSWITCH™ Package Bulk
Product Status Active Transistor Type NPN
Current - Collector (Ic) (Max) 10 A Voltage - Collector Emitter Breakdown (Max) 650 V
Vce Saturation (Max) @ Ib, Ic 1V @ 2.2A, 5.5A Current - Collector Cutoff (Max) 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 10A, 5V Power - Max 150 W
Frequency - Transition 2.75MHz Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Package / Case TO-247-3
Supplier Device Package TO-247

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MJW16212

ROHS Compliant Bipolar Transistors

Inventory:

8,904