MJE210G

Overview of MJE210G

The MJE210G is a power transistor optimized for high-speed and low-voltage operations, providing excellent performance for analog and digital signal switching.

Pinout

The MJE210G pinout refers to the configuration and function of each pin in its TO-225AA or TO-126-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MJE210G has a specific role such as power supply input, ground connection, or signal interface.

Features

• Collector-Emitter Sustaining Voltage (VCEO(sus)): The maximum collector-emitter sustaining voltage is 25 Vdc at an input current of 10 mAdc.
• High DC Current Gain: This transistor features a high DC current gain with values ranging from 70 to 45 and 10 depending on the input current, making it suitable for various applications.
• Low Collector-Emitter Saturation Voltage (VCE(sat)): The maximum collector-emitter saturation voltage is 0.3 Vdc at an input current of 500 mAdc or 0.75 Vdc at an input current of 2.0 Adc, ensuring low power dissipation and minimizing heat generation.
• High Current-Gain Bandwidth Product: The MJE210G transistor features a high current-gain bandwidth product with a minimum value of 65 MHz at an input current of 100 mAdc, making it suitable for high-speed applications.
• Annular Construction for Low Leakage: This transistor is designed to minimize leakage by using an annular construction that ensures low current between collector and base.
• Pb-Free Packages are Available: The MJE210G is available in Pb-free packages, meeting the growing demand for environmentally friendly products.

Applications

Advantages and Disadvantages

Advantages:

Disadvantages:

• Higher power dissipation at high currents: The transistor's collector-emitter voltage drop increases with increasing current, which may lead to higher power dissipation and potential overheating.
• Sensitivity to ambient temperature: This transistor is sensitive to changes in ambient temperature, which can affect its performance under different operating conditions.

Equivalents

For similar functionalities, consider these alternatives to the MJE210G :

Frequently Asked Questions

Q: What is the maximum collector-emitter sustaining voltage of MJE210G?
A: The maximum collector-emitter sustaining voltage is 25 Vdc at an input current of 10 mAdc.

Q: What is the high DC current gain of MJE210G suitable for?
A: This transistor features a high DC current gain with values ranging from 70 to 45 and 10 depending on the input current, making it suitable for various applications including power amplification.

Q: How can I minimize heat generation with MJE210G?
A: To minimize power dissipation, use this transistor within its safe operating conditions (junction temperature ≤ TA = 150°C), and ensure good thermal coupling to a heat sink or casing.

Q: Can I use MJE210G in high-speed applications?
A: Yes, the MJE210G transistor features a high current-gain bandwidth product with a minimum value of 65 MHz at an input current of 100 mAdc, making it suitable for high-speed applications including radio-frequency amplification and switching circuits.

Q: What is the low-forward-voltage drop characteristic of MJE210G?
A: This transistor features a low-forward-voltage drop, ensuring minimal power dissipation under typical operating conditions (input frequency < 1 kHz), making it suitable for applications where power efficiency is critical.