MJE200G

Overview of MJE200G

The MJE200G is a single bipolar transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The MJE200G pinout refers to the configuration and function of each pin in its TO-225 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MJE200G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• Collector-Emitter Sustaining Voltage - VCEO(sus): 25 Vdc (Min) @ IC = 10 mAdc
• High DC Current Gain - hFE: 70 (Min) @ IC = 500 mAdc, 45 (Min) @ IC = 2.0 Adc, and 10 (Min) @ IC = 5.0 Adc
• Low Collector-Emitter Saturation Voltage - VCE(sat): 0.3 Vdc (Max) @ IC = 500 mAdc and 0.75 Vdc (Max) @ IC = 2.0 Adc
• High Current-Gain - Bandwidth Product - fT: 65 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakage - ICBO: 100 nAdc @ Rated VCB
• Pb-Free Packages are Available

Applications

• Analog and Digital Signal Switching: The MJE200G is suitable for high-speed switching applications in analog and digital circuits.
• Power Amplifiers: This transistor can be used as a power amplifier in audio and radio frequency (RF) applications.
• Switch Mode Power Supplies: The MJE200G is suitable for switch mode power supplies due to its high current-gain and low saturation voltage.
• Audio Amplifiers: This transistor can be used in audio amplifiers, such as amplifiers for home stereos or car radios.

Equivalents

For similar functionalities, consider these alternatives to the MJE200G:

• MJE201G: This transistor has a higher current-gain than the MJE200G but is less suitable for high-frequency applications.
• MJE202G: This transistor has a lower saturation voltage than the MJE200G but is less suitable for high-current applications.

Frequently Asked Questions

Q: What is the maximum current that the MJE200G can handle?
A: The maximum current that the MJE200G can handle depends on the operating conditions, but it is typically around 5.0 Adc.

Q: Is the MJE200G suitable for high-frequency applications?
A: Yes, the MJE200G is suitable for high-frequency applications due to its high current-gain and bandwidth product.

Q: What are the advantages of using the MJE200G over other transistors?
A: The MJE200G has a high current-gain, low saturation voltage, and high frequency performance, making it suitable for applications that require high currents and low voltage drops.

Q: Are there any limitations to using the MJE200G in certain applications?
A: Yes, the MJE200G has some limitations. It is sensitive to temperature changes and has high current consumption, which can affect its performance and reliability in certain applications.