MJE182G

Overview of MJE182G

The MJE182G is a 3.0 A NPN Bipolar Power Transistor optimized for high-speed and low-voltage operations. It provides excellent performance for specific applications, such as analog and digital signal switching.

Pinout

The MJE182G pinout refers to the configuration and function of each pin in its TO-225-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MJE182G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• Collector-Emitter Sustaining Voltage - VCEO(sus): 80 Vdc for MJE182G, providing reliable operation in a wide range of applications.
• DC Current Gain - hFE: 12 (Min) @ IC = 1.5 Adc, ensuring efficient current amplification and signal processing.
• Current-Gain - Bandwidth Product - fT: 50 MHz (Min) @ IC = 100 mAdc, allowing for high-speed switching and signal transmission.
• Annular Construction for Low Leakages - ICB0: 100 nA (Max) @ Rated VCB, minimizing leakage current and ensuring reliable operation in harsh environments.
• Pb-Free Packages are Available, providing a lead-free solution for environmentally friendly designs.

Applications

• None specified, as the MJE182G is a general-purpose transistor suitable for various applications, including analog and digital signal processing, power amplification, and switching circuits.

Equivalents

For similar functionalities, consider these alternatives to the MJE182G:

• MJE171/MJE181, offering a slightly different set of features and performance characteristics.
• Other NPN bipolar power transistors, such as those from other manufacturers, which may offer similar or improved performance in specific applications.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage for the MJE182G?
A: 80 Vdc.

Q: What is the minimum DC current gain of the MJE182G at IC = 1.5 Adc?
A: 12 (Min).

Q: What is the maximum leakage current for the MJE182G at Rated VCB?
A: 100 nA.

Q: Are Pb-free packages available for the MJE182G?
A: Yes, providing a lead-free solution for environmentally friendly designs.