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MJE172G

Trans GP BJT PNP 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box

Quantity Unit Price(USD) Ext. Price
1 $0.475 $0.48
10 $0.385 $3.85
30 $0.345 $10.35
100 $0.298 $29.80
500 $0.242 $121.00
1000 $0.230 $230.00

Inventory:9,105

*The price is for reference only.
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Submit your quote request for MJE172G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of MJE172G

The MJE172G is a bipolar junction transistor (BJT) optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching applications.

Pinout

The MJE172G pinout refers to the configuration and function of each pin in its TO-225 package type. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the MJE172G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Collector-Emitter Sustaining Voltage - VCEO(sus): 80Vdc
  • DC Current Gain - hFE: 30 (Min) @ IC = 0.5 Adc, 12 (Min) @ IC = 1.5 Adc
  • Current-Gain - Bandwidth Product - fT: 50 MHz (Min) @ IC = 100 mAdc
  • Annular Construction for Low Leakages - ICB0: 100 nA (Max) @ Rated VCB
  • Pb-Free Packages are Available

Applications

  • Analog and Digital Signal Switching: The MJE172G is suitable for high-speed switching applications in analog and digital circuits.
  • Audio Amplifiers: This transistor can be used in audio amplifier circuits to provide high current gain and low noise performance.
  • Data Transmission Systems: The MJE172G's high-frequency performance makes it suitable for data transmission systems that require fast switching times.

Advantages and Disadvantages

Advantages

  • High-Speed Performance: The MJE172G provides high-speed performance with a current-gain bandwidth product of 50 MHz (Min) @ IC = 100 mAdc.
  • Low Noise Operation: This transistor offers low noise operation, making it suitable for applications where minimal noise is required.
  • High Current Gain: The MJE172G provides high current gain, which makes it suitable for applications that require high current output.

Disadvantages

  • Sensitive to Overvoltage: The MJE172G is sensitive to overvoltage and can be damaged if the collector-emitter voltage exceeds its rated value.
  • May Require Additional Components: Depending on the application, additional components such as resistors or capacitors may be required to ensure proper operation of the MJE172G.

Equivalents

For similar functionalities, consider these alternatives to the MJE172G:

  • MJE171G: This transistor has a similar current-gain bandwidth product and is suitable for high-speed switching applications.
  • MPS2222: This transistor provides high current gain and low noise operation, making it suitable for audio amplifier circuits.

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage of the MJE172G?
A: The maximum collector-emitter voltage of the MJE172G is 80Vdc.

Q: What is the current-gain bandwidth product of the MJE172G?
A: The current-gain bandwidth product of the MJE172G is 50 MHz (Min) @ IC = 100 mAdc.

Q: Is the MJE172G suitable for high-speed switching applications?
A: Yes, the MJE172G is suitable for high-speed switching applications due to its high current gain and low noise operation.

Q: Can the MJE172G be used in audio amplifier circuits?
A: Yes, the MJE172G can be used in audio amplifier circuits due to its high current gain and low noise operation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Active
Transistor Type PNP Current - Collector (Ic) (Max) 3 A
Voltage - Collector Emitter Breakdown (Max) 80 V Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA, 1V
Power - Max 1.5 W Frequency - Transition 50MHz
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3 Supplier Device Package TO-126
Base Product Number MJE172

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MJE172G

Trans GP BJT PNP 80V 3A 1500mW 3-Pin(3+Tab) TO-225 Box

Inventory:

9,105