• MJD44H11T4G Package
  • MJD44H11T4G Package
  • MJD44H11T4G Package
  • MJD44H11T4G Package
  • MJD44H11T4G Package
MJD44H11T4G Package
MJD44H11T4G Package
MJD44H11T4G Package
MJD44H11T4G Package
MJD44H11T4G Package

MJD44H11T4G

In Stock:9,857

MJD44H11T4G is a high-quality Single Bipolar Transistors from International Rectifier

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MJD44H11T4G
MJD44H11T4G
MJD44H11T4G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type DPAK-3 Case Outline 369C
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 2500
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 1
IC Cont. (A) 8 VCEO Min (V) 80
VEBO (V) 5 VBE(sat) (V) 1.5
hFE Min 60 PTM Max (W) 20
Pricing ($/Unit) $0.2493Sample

Overview of MJD44H11T4G

The MJD44H11T4G is a NPN Darlington Transistor designed for high-voltage and high-current applications. It features a high current gain and low saturation voltage, making it suitable for driving high-power loads in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter: Emitter of the transistor
  • Base: Base connection for control input
  • Collector: Collector of the transistor

Circuit Diagram

Provide a circuit diagram illustrating the usage of the MJD44H11T4G transistor in a typical application for better understanding.

Key Features

  • NPN Darlington Configuration: The MJD44H11T4G is configured in a Darlington pair to provide high current gain.
  • High Voltage and Current Ratings: This transistor can handle high voltages and currents, suitable for power applications.
  • Low Saturation Voltage: The MJD44H11T4G offers low saturation voltage, reducing power dissipation and heat generation.
  • Fast Switching Speed: With its Darlington configuration, this transistor provides fast switching characteristics.

Note: For detailed technical specifications, please consult the MJD44H11T4G datasheet.

Application

  • Power Amplification: Ideal for power amplification in audio and other high-power systems.
  • Motor Control: Suitable for driving and controlling motors and high-current devices.
  • Switching Circuits: Used in switching circuits for on/off control of high-power loads.

Functionality

The MJD44H11T4G NPN Darlington Transistor provides high current gain and low saturation voltage, enabling efficient and reliable driving of high-power loads in various electronic applications.

Usage Guide

  • Connection: Connect the Collector to the load, Base to the control signal, and Emitter to the ground/reference.
  • Voltage and Current: Ensure that the voltage and current ratings of the transistor meet the requirements of the application.
  • Heat Dissipation: Proper heat sinking is recommended to maintain the transistor within safe operating temperatures.

Frequently Asked Questions

Q: Is the MJD44H11T4G suitable for high-frequency applications?
A: This transistor is more suited for high-power applications due to its Darlington configuration and high current capability.

Equivalent

For similar functionalities, consider these alternatives to the MJD44H11T4G:

  • TIP122: A NPN Darlington transistor with comparable specifications for high-power applications.
  • MPSA13: This is a Darlington transistor that can also be used for high-power amplification and switching applications.

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MJD44H11T4G Package

MJD44H11T4G

MJD44H11T4G is an NPN bipolar transistor with a maximum voltage rating of 80V and a power dissipation of 1

Inventory:

9,857