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MJ10004

Darlington NPN TO-204AA Bipolar Junction Transistor

Inventory:7,497

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Overview of MJ10004

The MJ10004 is a high-power NPN silicon transistor designed for power amplifier and high-speed switching applications. It features a high current and voltage rating, making it suitable for demanding electronic circuits and power systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MJ10004 transistor for a visual representation.

Key Features

  • High Power Amplification: The MJ10004 provides high power amplification capabilities for audio and high-speed switching applications.
  • High Current and Voltage Rating: This transistor can handle high currents and voltages, making it suitable for power systems and industrial applications.
  • Robust Construction: The MJ10004 is designed to withstand high power and temperature stresses, ensuring long-term reliability.
  • Low Saturation Voltage: It features a low saturation voltage, reducing power dissipation and improving efficiency.
  • Fast Switching Speed: With its high-speed switching capabilities, the MJ10004 is ideal for applications requiring rapid switching transitions.

Note: For detailed technical specifications, please refer to the MJ10004 datasheet.

Application

  • Audio Amplification: Ideal for high-power audio amplifier circuits in professional audio systems and amplifiers.
  • Switching Power Supplies: Suitable for high-speed switching power supply units and industrial power control systems.
  • Motor Control: Used in motor control circuits where high current and voltage handling is required.

Functionality

The MJ10004 NPN transistor is designed to provide high-power amplification and fast switching characteristics for various electronic applications requiring high current and voltage handling capabilities.

Usage Guide

  • Mounting: Ensure proper heat sinking and mounting to dissipate thermal energy generated during high-power operation.
  • Power Ratings: Adhere to the specified maximum current and voltage ratings to prevent thermal and electrical overstress.
  • Base Control: Apply the appropriate base signal to control the transistor's amplification and switching functions.

Frequently Asked Questions

Q: Is the MJ10004 suitable for high-temperature environments?
A: Yes, the MJ10004 is constructed to withstand high-temperature operation and is suitable for demanding industrial and power applications.

Equivalent

For similar functionalities, consider these alternatives to the MJ10004:

  • 2N3055: This is a widely used NPN power transistor with similar power handling capabilities and high reliability.
  • MJ15003: A complementary NPN transistor offering comparable performance to the MJ10004 for high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SWITCHMODE Package Bulk
Product Status Active Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 20 A Voltage - Collector Emitter Breakdown (Max) 350 V
Vce Saturation (Max) @ Ib, Ic 3V @ 2A, 20A Current - Collector Cutoff (Max) 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 5V Power - Max 175 W
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Package / Case TO-204AA, TO-3 Supplier Device Package TO-3

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MJ10004

Darlington NPN TO-204AA Bipolar Junction Transistor

Inventory:

7,497