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MJ10000

Describing MJ10000

Quantity Unit Price(USD) Ext. Price
1 $21.956 $21.96
200 $8.761 $1,752.20
500 $8.468 $4,234.00
1000 $8.323 $8,323.00

Inventory:8,187

*The price is for reference only.
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Overview of MJ10000

The MJ10000 is a high-power NPN bipolar junction transistor designed for high-voltage and high-current applications. With its robust capabilities, it is suitable for power amplification, motor control, and high-voltage switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MJ10000 for a visual representation.

Key Features

  • High Power: The MJ10000 is capable of handling high power levels, making it suitable for high-performance applications.
  • High Voltage and Current: With its high-voltage and high-current ratings, it is ideal for applications requiring these characteristics.
  • Robust Construction: Built to withstand high electrical and thermal stress, ensuring reliability under demanding conditions.
  • Fast Switching: Offers fast switching capabilities, enabling rapid switching transitions in power circuits.
  • Low Saturation Voltage: Features a low saturation voltage, minimizing power dissipation in saturation mode.

Note: For detailed technical specifications, please refer to the MJ10000 datasheet.

Application

  • Power Amplification: Suitable for use in high-power audio amplifiers and power supply applications.
  • Motor Control: Ideal for controlling high-power motors and actuators in industrial and automotive systems.
  • Switching Circuits: Used in high-voltage switching applications such as flyback converters and voltage regulators.

Functionality

The MJ10000 is a high-power NPN transistor designed to handle high voltages and currents. Its robust construction and fast switching characteristics make it a versatile component for various high-power applications.

Usage Guide

  • Mounting: Ensure proper heat sinking and electrical insulation when mounting the MJ10000 due to its high-power characteristics.
  • Base Driving: Provide adequate base current and voltage to ensure proper saturation and switching performance.
  • Voltage and Current Limiting: Implement necessary voltage and current limiting circuits to protect the transistor and the overall system.

Frequently Asked Questions

Q: Can the MJ10000 be used in high-frequency applications?
A: Due to its characteristics, the MJ10000 is more suitable for low to medium frequency applications. For high frequency applications, consider alternative transistors optimized for high-speed operation.

Equivalent

For similar functionalities, consider these alternatives to the MJ10000:

  • 2N3055: A popular high-power NPN transistor with similar characteristics to the MJ10000.
  • MJ15003: This transistor offers comparable high-power performance and can be used as an alternative to the MJ10000.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SWITCHMODE Package Bulk
Product Status Active Transistor Type NPN - Darlington
Current - Collector (Ic) (Max) 20 A Voltage - Collector Emitter Breakdown (Max) 450 V
Vce Saturation (Max) @ Ib, Ic 3V @ 1A, 20A Current - Collector Cutoff (Max) 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 5A, 5V Power - Max 175 W
Operating Temperature -65°C ~ 200°C (TJ) Mounting Type Through Hole
Package / Case TO-204AA, TO-3 Supplier Device Package TO-3

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