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MGSF2N02ELT1G

85mOhm N-channel MOSFET in SOT23 package, rated at 20V and 2.8A of current

Inventory:7,950

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Overview of MGSF2N02ELT1G

The MGSF2N02ELT1G is a MOSFET transistor designed for high-speed switching applications in various electronic circuits. This transistor features a low on-state resistance and high switching speed, making it ideal for power management and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MGSF2N02ELT1G MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The MGSF2N02ELT1G offers fast switching characteristics, suitable for applications requiring quick on/off transitions.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power loss and heat generation during operation.
  • Enhanced Power Management: This transistor is capable of handling moderate power levels efficiently, making it suitable for power control applications.
  • Compact Package: Available in a compact SOT-223 package, enabling space-saving integration in circuit designs.
  • Wide Operating Voltage Range: Operates within a wide voltage range, providing flexibility for various voltage requirements.

Note: For detailed technical specifications, please refer to the MGSF2N02ELT1G datasheet.

Application

  • Power Management: Ideal for power switching applications in DC-DC converters, voltage regulators, and motor control circuits.
  • Amplification: Can be used for signal amplification in audio amplifiers, RF circuits, and sensor interfaces.
  • LED Drivers: Suitable for driving LEDs in lighting applications and display systems.

Functionality

The MGSF2N02ELT1G MOSFET transistor is designed to control the flow of power in electronic circuits efficiently. It offers high-speed switching capabilities and low resistance for improved performance in various applications.

Usage Guide

  • Gate Voltage: Apply the appropriate gate-source voltage to turn the MOSFET on or off.
  • Drain-Source Connection: Connect the load circuit between the drain and source pins.
  • Source Connection: Connect the source pin to the circuit ground or reference point.

Frequently Asked Questions

Q: Can the MGSF2N02ELT1G be used in high-frequency applications?
A: Yes, the MGSF2N02ELT1G offers high-speed switching suitable for high-frequency circuits.

Equivalent

For similar functionalities, consider these alternatives to the MGSF2N02ELT1G:

  • IRF520: A MOSFET transistor with comparable performance characteristics for power management applications.
  • BSS138: This transistor offers similar switching speed and low on-state resistance for voltage control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SOT-23-3 Case Outline 318-08
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 20
VGS Max (V) 8 VGS(th) Max (V) 1
ID Max (A) 2.8 PD Max (W) 1.25
RDS(on) Max @ VGS = 2.5 V (mΩ) 115 RDS(on) Max @ VGS = 4.5 V (mΩ) 85
Qg Typ @ VGS = 10 V (nC) 3.5 Ciss Typ (pF) 150
Pricing ($/Unit) $0.1033Sample

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MGSF2N02ELT1G

85mOhm N-channel MOSFET in SOT23 package, rated at 20V and 2.8A of current

Inventory:

7,950