• MAT01AHZ TO-78-6
MAT01AHZ TO-78-6

MAT01AHZ

Matched Monolithic Dual Transistor

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  • Part Number : MAT01AHZ

  • Package/Case : TO-78-6

  • Brands : ADI

  • Components Categories : Bipolar (BJT)Bipolar Transistor Arrays

  • Datesheet : MAT01AHZ DataSheet (PDF)

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Overview of MAT01AHZ

GENERAL DESCRIPTION The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.FEATURES Low VOS (VBE match): 40 µV typical, 100 µV maximum Low TCVOS: 0.5 µV/°C maximum High hFE: 500 minimum Excellent hFE linearity from 10 nA to 10 mA Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz High breakdown: 45 V minAPPLICATIONS Weigh scales Low noise, op amp, front end Current mirror and current sink/source Low noise instrumentation amplifiers Voltage controlled attenuators Log amplifiers

MAT01AHZ

Key Features

  • Low VOS (VBE match): 40 µV typical, 100 µV maximum
  • Low TCVOS: 0.5 µV/°C maximum
  • High hFE: 500 minimum
  • Excellent hFE linearity from 10 nA to 10 mA
  • Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
  • High breakdown: 45 V min

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid MAT01AHZ Pbfree Code No
Rohs Code Yes Part Life Cycle Code Not Recommended
Ihs Manufacturer ANALOG DEVICES INC Part Package Code TO-78
Package Description CYLINDRICAL, O-MBCY-W6 Pin Count 6
Manufacturer Package Code H-6 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8541.21.00.95
Samacsys Manufacturer Analog Devices Additional Feature LOW NOISE
Case Connection SUBSTRATE Collector Current-Max (IC) 0.025 A
Collector-Emitter Voltage-Max 45 V Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 500 JEDEC-95 Code TO-78
JESD-30 Code O-MBCY-W6 JESD-609 Code e4
Number of Elements 2 Number of Terminals 6
Operating Temperature-Max 150 °C Package Body Material METAL
Package Shape ROUND Package Style CYLINDRICAL
Polarity/Channel Type NPN Power Dissipation Ambient-Max 1.8 W
Power Dissipation-Max (Abs) 1.8 W Qualification Status Not Qualified
Surface Mount NO Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form WIRE Terminal Position BOTTOM
Transistor Element Material SILICON Transition Frequency-Nom (fT) 450 MHz
VCEsat-Max 0.2 V

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