MAT01AH
Bipolar Junction Transistor Pair NPN TO-78 Type
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Part Number : MAT01AH
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Package/Case : TO-6
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Manufacturer : Analog Devices
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Components Classification : Bipolar Transistor Arrays
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Datesheet : MAT01AH DataSheet (PDF)
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Series : MAT01
The MAT01AH is a precision monolithic dual NPN transistor designed for high-performance amplifier and precision analog circuit applications. This dual transistor IC features low offset voltage and low input bias current, making it ideal for use in precision signal processing applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the MAT01AH for a visual representation. Note: For detailed technical specifications, please refer to the MAT01AH datasheet. Functionality The MAT01AH is a precision dual NPN transistor IC that provides accurate amplification and signal processing capabilities for high-performance analog circuits. It delivers reliable and stable performance in applications demanding precision. Usage Guide Q: What is the typical offset voltage of the MAT01AH? Q: Is the MAT01AH suitable for high-frequency applications? For similar functionalities, consider these alternatives to the MAT01AH:Overview of MAT01AH
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A: The MAT01AH has a typical offset voltage in the range of a few microvolts, ensuring precise amplification of small signals.
A: Yes, the high gain-bandwidth product of the MAT01AH makes it suitable for amplifying high-frequency signals with minimal distortion.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-78-6 |
Transistor Polarity | NPN | Configuration | Dual |
Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 45 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 800 mV |
Maximum DC Collector Current | 25 mA | Pd - Power Dissipation | 500 mW |
Gain Bandwidth Product fT | 450 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 125 C | Series | MAT01 |
Brand | Analog Devices | DC Collector/Base Gain hfe Min | 500 at 10 uA, 15 V |
Height | 4.7 mm | Length | 9.4 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 100 |
Subcategory | Transistors | Technology | Si |
Width | 9.4 mm |
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