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MA4AGSW3

Monolithic microwave device for precise signal control and switching

Inventory:2,526

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Overview of MA4AGSW3

The MA4AGSW3 is a high-speed silicon PIN diode designed for use in RF and microwave applications. This diode features low capacitance and resistance, making it ideal for switching and attenuating RF signals with minimal loss.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Anode: Positive terminal
  • Cathode: Negative terminal
  • RF In/Out: Radio frequency input/output
  • GND: Ground connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MA4AGSW3 for a visual representation.

Key Features

  • High-Speed Switching: The MA4AGSW3 offers high-speed switching capabilities, allowing for quick response times in RF applications.
  • Low Insertion Loss: With low capacitance and resistance, this diode provides low insertion loss in RF signal paths.
  • Wide Frequency Range: Suitable for use across a wide frequency range, making it versatile for various RF and microwave applications.
  • High Isolation: Provides high isolation to prevent signal leakage and crosstalk in RF systems.
  • Compact Size: Available in a compact form factor, ideal for space-constrained designs.

Note: For detailed technical specifications, please refer to the MA4AGSW3 datasheet.

Application

  • RF Switching: Suitable for RF signal switching in communication systems, radar applications, and test equipment.
  • Attenuation: Used for signal attenuation in RF circuits to control signal levels and minimize interference.
  • RF Modulation: Ideal for RF modulation and demodulation processes in wireless communication systems.

Functionality

The MA4AGSW3 silicon PIN diode serves as a reliable and efficient component for RF signal switching and attenuation, ensuring seamless operation in RF and microwave circuits.

Usage Guide

  • Connection: Connect the anode and cathode pins to the respective positive and negative terminals of the RF circuit.
  • Grounding: Ensure a solid connection to the ground pin for proper operation and signal integrity.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the MA4AGSW3?
A: The MA4AGSW3 can operate across a frequency range of up to 20 GHz, catering to a wide range of RF applications.

Q: Is the MA4AGSW3 suitable for high-power RF applications?
A: Yes, the MA4AGSW3 can handle high-power RF signals efficiently, making it suitable for robust RF systems.

Equivalent

For similar functionalities, consider these alternatives to the MA4AGSW3:

  • MA4GP092: Another high-speed silicon PIN diode with similar characteristics for RF and microwave applications.
  • MA4GP915: This PIN diode offers high isolation and low insertion loss, suitable for RF switching and attenuating applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Switch ICs RoHS Details
Switch Configuration SP3T Minimum Frequency 50 MHz
Maximum Frequency 70 GHz Insertion Loss 0.8 dB
Off Isolation - Typ 31 dB Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 125 C Mounting Style SMD/SMT
Package / Case Die Technology GaAs
Brand MACOM Number of Switches Single
Operating Supply Current 10 mA Product Type RF Switch ICs
Factory Pack Quantity 25 Subcategory Wireless & RF Integrated Circuits
Unit Weight 0.042987 oz

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MA4AGSW3

Monolithic microwave device for precise signal control and switching

Inventory:

2,526