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LND150K1-G

Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R

Quantity Unit Price(USD) Ext. Price
1000 $0.442 $442.00
500 $0.462 $231.00
100 $0.502 $50.20
30 $0.568 $17.04
10 $0.635 $6.35
1 $0.769 $0.77

Inventory:9,166

*The price is for reference only.
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Overview of LND150K1-G

The LND150K1-G is a N-channel depletion mode field-effect transistor (FET) designed for various electronic applications. This transistor features a high input impedance and low input capacitance, making it suitable for amplifier and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Input terminal for controlling the flow of current through the transistor
  • Drain (D): Output terminal for the current flow
  • Source (S): Connection to the ground or common reference potential

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the LND150K1-G for a visual representation.

Key Features

  • N-Channel Depletion Mode FET: The LND150K1-G is a depletion mode FET with N-channel conductivity.
  • High Input Impedance: This transistor offers high input impedance, minimizing the loading effect on the driving circuit.
  • Low Input Capacitance: With low input capacitance, the LND150K1-G is suitable for high-frequency applications.
  • High Gain: The transistor provides high gain, making it suitable for amplifier circuits.
  • Low Leakage Current: It features low leakage current, ensuring minimal power dissipation when in the off state.

Note: For detailed technical specifications, please refer to the LND150K1-G datasheet.

Application

  • Amplifier Circuits: Ideal for use in audio and radio frequency (RF) amplifier circuits.
  • Switching Circuits: Suitable for switching applications in electronic devices.
  • Oscillator Circuits: The high input impedance and low input capacitance make it appropriate for oscillator circuits.

Functionality

The LND150K1-G depletion mode FET provides high input impedance and low input capacitance, making it well-suited for amplifier and switching circuits. It offers reliable control of current flow in electronic applications.

Usage Guide

  • Gate Connection: Connect the input signal to the Gate (G) terminal to control the transistor's conductivity.
  • Drain and Source Connections: Establish the output and ground connections respectively for proper current flow control.

Frequently Asked Questions

Q: What are the typical applications of the LND150K1-G?
A: The LND150K1-G is commonly used in amplifier, switching, and oscillator circuits due to its high input impedance and low input capacitance.

Q: Is the LND150K1-G suitable for high-frequency applications?
A: Yes, the low input capacitance of the LND150K1-G makes it suitable for high-frequency oscillator and amplifier circuits.

Equivalent

For similar functionalities, consider these alternatives to the LND150K1-G:

  • 2N7002: This N-channel FET offers similar characteristics and performance to the LND150K1-G in depletion mode.
  • J310: This FET provides comparable high input impedance and low input capacitance for amplifier and RF circuits.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 500 V
Id - Continuous Drain Current 13 mA Rds On - Drain-Source Resistance 1 kOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 360 mW
Channel Mode Depletion Brand Microchip Technology
Configuration Single Fall Time 1.3 us
Forward Transconductance - Min 1 mOhms Product MOSFET Small Signals
Product Type MOSFET Rise Time 0.45 us
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 0.1 us
Typical Turn-On Delay Time 0.09 us Unit Weight 0.000282 oz

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LND150K1-G

Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R

Inventory:

9,166