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LM2005DR

Reliable under voltage conditions with 8-V UVLO

Inventory:3,904

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Overview of LM2005DR

The LM2005 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.

The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2005 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.

Key Features

  • Drives two N-channel MOSFETs in half-bridge configuration
  • Integrated bootstrap diode
  • 8-V typical undervoltage lockout on GVDD
  • 107-V absolute maximum voltage on BST
  • –19.5-V absolute maximum negative transient voltage handling on SH
  • 0.5-A/0.8-A peak source/sink currents
  • 115-ns typical propagation delay

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Bootstrap supply voltage (max) (V) 107 Power switch IGBT, MOSFET
Input supply voltage (min) (V) 9 Input supply voltage (max) (V) 18
Peak output current (A) 0.65 Operating temperature range (°C) -40 to 125
Undervoltage lockout (typ) (V) 8 Rating Catalog
Fall time (ns) 18 Input threshold CMOS, TTL
Channel input logic Noninverting Switch node voltage (V) -1
Features Integrated bootstrap diode Driver configuration Dual inputs

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Warranty, Returns, and Additional Information

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LM2005DR

Reliable under voltage conditions with 8-V UVLO

Inventory:

3,904