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LBC847BPDW1T1G

Dual NPN and PNP Configuration

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.019 $3.80
600 $0.017 $10.20
3000 $0.015 $45.00
9000 $0.014 $126.00
21000 $0.013 $273.00

Inventory:7,760

*The price is for reference only.
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Overview of LBC847BPDW1T1G

The LBC847BPDW1T1G is a dual NPN and PNP bipolar junction transistor (BJT) in a SOT-363 package. It features a high current gain and low saturation voltage, making it suitable for general-purpose switching and amplification applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (NPN)
  • Base (NPN)
  • Collector (NPN)
  • Collector (PNP)
  • Base (PNP)
  • Emitter (PNP)

Circuit Diagram

Include a circuit diagram to illustrate the connections and usage of the LBC847BPDW1T1G for a visual representation.

Key Features

  • Dual NPN and PNP Transistors: Provides both NPN and PNP transistors in a single package for versatile circuit design.
  • High Current Gain: Offers high hFE values for efficient signal amplification.
  • Low Saturation Voltage: The low VCE(sat) ensures minimal power loss in switching applications.
  • SOT-363 Package: Compact and space-saving package suitable for small-size PCB designs.
  • Wide Application Range: Can be used in a variety of general-purpose switching and amplification circuits.

Note: For detailed technical specifications, please refer to the LBC847BPDW1T1G datasheet.

Application

  • Signal Amplification: Suitable for use in audio amplifiers and signal processing circuits.
  • Switching Circuits: Can be used in various switching applications such as relay drivers and motor control.
  • General-Purpose Transistor Circuits: Ideal for incorporating NPN and PNP transistors in a single circuit design.

Functionality

The LBC847BPDW1T1G integrates dual NPN and PNP transistors, providing flexibility for signal amplification and switching applications. Its high current gain and low saturation voltage make it a reliable choice for general-purpose circuits.

Usage Guide

  • NPN Transistor Configuration: Connect the emitter, base, and collector pins of the NPN transistor as per the circuit requirements.
  • PNP Transistor Configuration: Utilize the emitter, base, and collector pins of the PNP transistor based on the circuit design.
  • Operating Conditions: Ensure proper biasing and operating conditions as per the datasheet recommendations for optimal performance.

Frequently Asked Questions

Q: What is the maximum collector current rating of the LBC847BPDW1T1G?
A: The maximum collector current rating is specified in the datasheet, and it is important to adhere to the recommended limits for safe operation.

Q: Can the LBC847BPDW1T1G be used in high-frequency applications?
A: The LBC847BPDW1T1G is designed for general-purpose applications and may not be suitable for high-frequency designs. Consider alternative devices optimized for high-frequency performance.

Equivalent

For similar functionalities, consider these alternatives to the LBC847BPDW1T1G:

  • BC847C: This is a general-purpose NPN transistor with similar characteristics and performance.
  • BC857C: A PNP transistor with comparable features, suitable for complementary circuit designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT Brand onsemi
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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LBC847BPDW1T1G

Dual NPN and PNP Configuration

Inventory:

7,760