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IXYN30N170CV1

Insulated Gate Bipolar Transistor from the IXYN30N170CV1 series with a 30A current rating

Inventory:7,428

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Overview of IXYN30N170CV1

The IXYN30N170CV1 is a high-voltage IGBT designed for use in power electronics applications. This IGBT features a high current rating and low saturation voltage, making it suitable for various power switching and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): High-voltage terminal for the collector
  • Emitter (E): Terminal for the emitter
  • GATE: Input terminal for the gate signal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXYN30N170CV1 IGBT for a visual representation.

Key Features

  • High Voltage Rating: The IXYN30N170CV1 is designed to handle high voltage levels, making it suitable for high-power applications.
  • High Current Capability: This IGBT can handle high current levels, making it ideal for power switching applications.
  • Low Saturation Voltage: The low saturation voltage ensures minimal power loss during conduction, improving overall efficiency.
  • Fast Switching Speed: With fast turn-on and turn-off characteristics, the IXYN30N170CV1 enables efficient power control in various applications.

Note: For detailed technical specifications, please refer to the IXYN30N170CV1 datasheet.

Application

  • Power Inverters: Ideal for use in high-power inverters for converting DC power to AC power.
  • Motor Drives: Suitable for motor control applications in industrial and automotive systems.
  • Switching Power Supplies: Used in high-voltage switching power supplies for efficient power conversion.

Functionality

The IXYN30N170CV1 is a high-voltage IGBT designed for power switching applications, providing high current capability and low saturation voltage for efficient power control.

Usage Guide

  • GATE Control: Apply the appropriate gate signal to control the conduction and switching of the IGBT.
  • Connect Collector and Emitter: Ensure proper connection of the collector and emitter terminals in the power circuit.

Frequently Asked Questions

Q: Can the IXYN30N170CV1 be used in high-power motor control applications?
A: Yes, the IXYN30N170CV1 is suitable for high-power motor control due to its high current capability and fast switching speed.

Equivalent

For similar functionalities, consider these alternatives to the IXYN30N170CV1:

  • IXYS30N170: This is a comparable high-voltage IGBT from IXYS, offering similar characteristics for power switching applications.
  • Infineon IGBT: Explore high-voltage IGBT options from Infineon with similar voltage and current ratings for diverse power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Modules RoHS Details
Product IGBT Silicon Modules Configuration Single
Collector- Emitter Voltage VCEO Max 1.7 kV Collector-Emitter Saturation Voltage 3.5 V
Continuous Collector Current at 25 C 88 A Gate-Emitter Leakage Current 100 nA
Pd - Power Dissipation 680 W Package / Case SOT-227B
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Brand IXYS Maximum Gate Emitter Voltage 20 V
Mounting Style Chassis Mount Product Type IGBT Modules
Series High Voltage Factory Pack Quantity 10
Subcategory IGBTs Technology Si
Tradename XPT Unit Weight 1.058219 oz

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IXYN30N170CV1

Insulated Gate Bipolar Transistor from the IXYN30N170CV1 series with a 30A current rating

Inventory:

7,428