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High-power N-channel MOSFET with 250V voltage rating and 90A current rating

Quantity Unit Price(USD) Ext. Price
1 $32.888 $32.89
200 $12.728 $2,545.60
500 $12.280 $6,140.00
1000 $12.059 $12,059.00


*The price is for reference only.
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Overview of IXTX90N25L2

The IXTX90N25L2 is a power MOSFET transistor designed for high-power switching applications. It features a low on-state resistance and high current capability, making it suitable for demanding power electronics projects.


(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTX90N25L2 for a visual representation.

Key Features

  • High Power Switching: The IXTX90N25L2 is capable of handling high power levels, suitable for power switching applications.
  • Low On-State Resistance: With a low RDS(on), this MOSFET minimizes power losses and improves efficiency.
  • High Current Capability: It can handle significant current levels, making it ideal for high-current circuits.
  • Fast Switching Speed: The transistor offers fast switching times, enabling quick response in switching applications.

Note: For detailed technical specifications, please refer to the IXTX90N25L2 datasheet.


  • Power Supplies: Suitable for use in power supply units and voltage regulation circuits.
  • Motor Control: Ideal for controlling high-power electric motors in industrial applications.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.


The IXTX90N25L2 is a power MOSFET transistor that enables efficient and reliable power switching operations in various electronic circuits.

Usage Guide

  • Gate Drive: Apply suitable voltage levels to the Gate pin for turning the MOSFET on and off.
  • Load Connection: Connect the Drain pin to the load and the Source pin to the ground.

Frequently Asked Questions

Q: Is the IXTX90N25L2 suitable for high-frequency applications?
A: The IXTX90N25L2 is designed for high-power switching applications and may not be ideal for high-frequency operations. For high-frequency applications, consider specialized transistors with appropriate characteristics.


For similar functionalities, consider these alternatives to the IXTX90N25L2:

  • FDPF51N25: This power MOSFET offers comparable performance to the IXTX90N25L2 in high-power switching applications.
  • IRF540N: A popular MOSFET choice for power switching applications with similar specifications to the IXTX90N25L2.


The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 250 Maximum On-Resistance @ 25 ℃ (Ohm) 0.036
Continuous Drain Current @ 25 ℃ (A) 90 Gate Charge (nC) 640
Input Capacitance, CISS (pF) 23000 Thermal resistance [junction-case] (K/W) 0.13
Configuration Single Package Type TO-247 PLUS
Typical Reverse Recovery Time (ns) 266 Power Dissipation (W) 960
Sample Request Yes Check Stock Yes

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