• IXTP80N10T TO-220-3
IXTP80N10T TO-220-3

IXTP80N10T

MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance

Quantity Unit Price(USD) Ext. Price
1000 $1.196 $1,196.00
500 $1.226 $613.00
100 $1.295 $129.50
30 $1.448 $43.44
10 $1.598 $15.98
1 $1.836 $1.84

Inventory:8,212

*The price is for reference only.
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Overview of IXTP80N10T

The IXTP80N10T is a power MOSFET transistor designed for high current switching applications. With its low on-resistance and high current handling capability, it is suitable for various power management circuits and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTP80N10T MOSFET for a visual representation.

Key Features

  • High Current Capability: The IXTP80N10T can handle high currents, making it suitable for power switching applications.
  • Low On-Resistance: With its low on-resistance, this MOSFET minimizes power dissipation and improves efficiency in switching circuits.
  • Fast Switching Speed: Offers fast switching characteristics, ensuring rapid response times in power control applications.
  • High Voltage Rating: With a high voltage rating, it is suitable for use in high voltage circuits.
  • TO-220 Package: Available in a TO-220 package for easy mounting and heat dissipation.

Note: For detailed technical specifications, please refer to the IXTP80N10T datasheet.

Application

  • Power Management Systems: Ideal for use in power management circuits requiring high current switching.
  • Motor Control: Suitable for motor control applications due to its high current handling capability.
  • Power Supplies: Can be used in various power supply designs for efficient power switching.

Functionality

The IXTP80N10T is a power MOSFET transistor designed for high current switching applications. It provides efficient power management and control in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin (G) to control the switching of the MOSFET.
  • Drain-Source Connection: Connect the load between the drain (D) and source (S) pins.
  • Heat Dissipation: Ensure proper heat sinking for the TO-220 package to maintain optimal operating conditions.

Frequently Asked Questions

Q: Is the IXTP80N10T suitable for high voltage applications?
A: Yes, the IXTP80N10T has a high voltage rating, making it suitable for high voltage circuits.

Equivalent

For similar functionalities, consider these alternatives to the IXTP80N10T:

  • IRF3205: A power MOSFET with comparable specifications and performance characteristics to the IXTP80N10T.
  • STP80NF10: This MOSFET offers similar high current handling capability and low on-resistance for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) 100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.014
Continuous Drain Current @ 25 ℃ (A) 80 Gate Charge (nC) 60
Input Capacitance, CISS (pF) 3040 Thermal resistance [junction-case] (K/W) 0.65
Configuration Single Package Type TO-220
Typical Reverse Recovery Time (ns) 100 Power Dissipation (W) 230
Sample Request Yes Check Stock Yes

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IXTP80N10T

MOSFET with 80 Amps and 100V, featuring a Rds of 13.0 for high performance

Inventory:

8,212