IXTP110N055T2
Specifications: This MOSFET device operates as an N-channel switch, supporting up to 55V voltage and 110A current in a TO-220 package
Inventory:6,378
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Part Number : IXTP110N055T2
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Package/Case : TO220-3
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Manufacturer : IXYS Integrated Circuits Division
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Components Classification : Single FETs, MOSFETs
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Datesheet : IXTP110N055T2 DataSheet (PDF)
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Series : IXTP110N055
The IXTP110N055T2 is a high-performance power MOSFET designed for use in various switching applications. This MOSFET features a low on-state resistance and high current capability, making it suitable for power management in industrial and automotive systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IXTP110N055T2 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IXTP110N055T2 datasheet. Functionality The IXTP110N055T2 MOSFET is designed to provide efficient power switching and control in various applications, ensuring reliable performance in high-power environments. Usage Guide Q: Is the IXTP110N055T2 suitable for automotive applications? For similar functionalities, consider these alternatives to the IXTP110N055T2:Overview of IXTP110N055T2
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IXTP110N055T2 is designed for high-performance automotive power management applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 110 A | Rds On - Drain-Source Resistance | 6.6 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 57 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 180 W |
Channel Mode | Enhancement | Tradename | HiPerFET |
Series | IXTP110N055 | Brand | IXYS |
Configuration | Single | Fall Time | 23 ns |
Forward Transconductance - Min | 30 S | Height | 9.15 mm |
Length | 10.66 mm | Product Type | MOSFET |
Rise Time | 25 ns | Factory Pack Quantity | 50 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 40 ns | Typical Turn-On Delay Time | 18 ns |
Width | 4.83 mm | Unit Weight | 0.068784 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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IXTP110N055T2
Specifications: This MOSFET device operates as an N-channel switch, supporting up to 55V voltage and 110A current in a TO-220 package
Inventory:
6,378Warranty & Returns
After Sales Service
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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Package
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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
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