IXKR25N80C

Overview of IXKR25N80C

IXKR25N80C is an N-Channel MOSFET optimized for high-speed switching capability, robust electromagnetic interference (EMI) filtering, and high-reliability wire bonding technology. It provides excellent performance for efficient power supplies, reliable UPS systems, and improved power factor.

Pinout

The IXKR25N80C pinout refers to the configuration and function of each pin in its TO-247-3 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the IXKR25N80C has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• Pulse-width modulation (PWM) optimized: Supports high-frequency switching capabilities
• Advanced thermal management system: Ensures reliable operation even in harsh environments
• Reduced power consumption: Minimizes energy waste and reduces overall system costs
• Enhanced operating temperature range: Supports wide temperature ranges, ensuring stable performance under various conditions

Applications

• Efficient power supplies: Used in high-reliability applications like data centers and medical devices
• Reliable UPS systems: Provides backup power for critical loads during outages or shutdowns
• Improved power factor: Enhances overall system efficiency and reduces harmonic distortion
• Space-efficient design: Enables high-density power solutions in compact spaces
• High-density power: Suitable for applications requiring high power levels in a small form factor

Advantages and Disadvantages

Advantages

• Improved reliability: The IXKR25N80C's advanced design ensures reduced failure rates and increased Mean Time Between Failures (MTBF)
• Faster switching times: Supports high-frequency switching, enabling faster response times in dynamic systems
• Limited thermal noise: The device's low thermal noise and robust electromagnetic interference filtering minimize EMI issues
• Elongated lifespan: The IXKR25N80C's design enables it to operate efficiently over an extended period

Disadvantages

• Potential thermal limitations: High-temperature applications might require derating for optimal performance and lifespan

Equivalents

For similar functionalities, consider these alternatives to the IXKR25N80C:

• IXYS 25N80C: Offers similar high-speed switching capabilities with improved thermal performance
• Data Sheet: IXYS 28N60C: Provides a similar advanced thermal management system and reduced power consumption for high-reliability applications

Frequently Asked Questions

Q: What is the maximum current rating of the IXKR25N80C?
A: The device has a maximum current rating of 80A at room temperature, with derating applicable for high temperatures.

Q: Can I use the IXKR25N80C in inverter applications?
A: Yes, the IXKR25N80C's pulse-width modulation (PWM) optimized design makes it suitable for inverter applications requiring high-speed switching capabilities

Q: Does the IXKR25N80C have any specific handling or storage requirements?
A: The device requires ESD protection during handling and storage, as per industry standards

Q: What is the recommended operating temperature range for the IXKR25N80C?
A: The recommended operating temperature range is -40°C to 125°C, with derating applicable at temperatures above 125°C