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IXGQ90N33TCD1

The IXGQ90N33TCD1 features a N-CH Trans IGBT Chip configuration with a maximum voltage of 330V

Inventory:5,094

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Overview of IXGQ90N33TCD1

The IXGQ90N33TCD1 is a high-performance 3300V, 90A IGBT designed for power electronic applications that require high power density and efficiency. It is optimized for use in industrial motor drives, renewable energy systems, and electric vehicle powertrains, among other applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • C-E: Collector-Emitter
  • G-E: Gate-Emitter
  • E: Emitter
  • C: Collector
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXGQ90N33TCD1 IGBT for a visual representation.

Key Features

  • High Voltage Rating: The IXGQ90N33TCD1 is rated for a high breakdown voltage of 3300V, making it suitable for high-power applications.
  • High Current Capability: With a continuous collector current rating of 90A, this IGBT can handle large currents in demanding conditions.
  • Low Saturation Voltage: The low VCE(sat) of the IXGQ90N33TCD1 minimizes power dissipation and contributes to high efficiency.
  • High Switching Speed: This IGBT offers fast switching characteristics, enabling efficient power conversion and control.
  • Robust Construction: Designed for reliable operation in challenging environments, the IXGQ90N33TCD1 features a rugged and durable construction.

Note: For detailed technical specifications, please refer to the IXGQ90N33TCD1 datasheet.

Application

  • Industrial Motor Drives: Ideal for driving motors in industrial applications, providing efficient and precise motor control.
  • Renewable Energy Systems: Suited for use in inverters and converters for solar, wind, and other renewable energy systems.
  • Electric Vehicle Powertrains: Suitable for power electronics in electric vehicle propulsion systems, contributing to high performance and energy efficiency.

Functionality

The IXGQ90N33TCD1 is a high-voltage, high-current IGBT designed to facilitate efficient power conversion and control in a wide range of applications. Its fast switching speed and robust construction make it a reliable choice for demanding power electronic systems.

Usage Guide

  • Power Connections: Connect the collector, emitter, and gate terminals to the corresponding circuits with appropriate power and control signals based on the application requirements.
  • Heat Management: Proper thermal design and heat sinking are essential for maximizing the performance and reliability of the IXGQ90N33TCD1 in high-power applications.
  • Gate Control: Apply the appropriate gate signals to control the turn-on and turn-off characteristics of the IGBT for efficient power switching.

Frequently Asked Questions

Q: What is the maximum voltage rating of the IXGQ90N33TCD1?
A: The IXGQ90N33TCD1 is rated for a maximum voltage of 3300V, allowing it to handle high-voltage applications.

Q: Can the IXGQ90N33TCD1 be used in renewable energy systems?
A: Yes, the IXGQ90N33TCD1 is suitable for use in inverters and converters for solar, wind, and other renewable energy systems, contributing to efficient power conversion.

Equivalent

For similar functionalities, consider these alternatives to the IXGQ90N33TCD1:

  • IXGH90N33TCD1: A comparable high-voltage, high-current IGBT designed for similar power electronic applications.
  • IRG4BC30KPBF: This IGBT from Infineon offers similar high-power performance and voltage ratings, suitable for industrial and renewable energy applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category IGBT Transistors RoHS Details
Technology Si Package / Case TO-3P
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 330 V Collector-Emitter Saturation Voltage 1.8 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 90 A
Pd - Power Dissipation 200 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Brand IXYS
Gate-Emitter Leakage Current 200 nA Product Type IGBT Transistors
Factory Pack Quantity 30 Subcategory IGBTs
Unit Weight 0.194007 oz

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IXGQ90N33TCD1

The IXGQ90N33TCD1 features a N-CH Trans IGBT Chip configuration with a maximum voltage of 330V

Inventory:

5,094